Infineon OptiMOS Type N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin TSDSON

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Sous-total (1 bobine de 5000 unités)*

1 500,00 €

(TVA exclue)

1 800,00 €

(TVA incluse)

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  • Expédition à partir du 17 juin 2026
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Unité
Prix par unité
la bobine*
5000 +0,30 €1 500,00 €

*Prix donné à titre indicatif

N° de stock RS:
165-6875
Référence fabricant:
BSZ0904NSIATMA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

30V

Series

OptiMOS

Package Type

TSDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5.7mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

8.5nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.56V

Maximum Power Dissipation Pd

37W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

3.4 mm

Height

1.1mm

Length

3.4mm

Automotive Standard

No

Statut RoHS non applicable

Pays d'origine :
CN

Infineon OptiMOS™ Power MOSFET Family


OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode

Automotive AEC Q101 qualified

MSL1 up to 260°C Peak reflow

175°C operating temperature

Green package (lead free)

Ultra low Rds(on)

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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