Infineon OptiMOS P Type P-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin TDSON

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Sous-total (1 bobine de 5000 unités)*

5 145,00 €

(TVA exclue)

6 225,00 €

(TVA incluse)

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Prix par unité
la bobine*
5000 +1,029 €5 145,00 €

*Prix donné à titre indicatif

N° de stock RS:
178-7488
Référence fabricant:
BSC030P03NS3GAUMA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

30V

Package Type

TDSON

Series

OptiMOS P

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

4.6mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

25 V

Maximum Power Dissipation Pd

125W

Typical Gate Charge Qg @ Vgs

140nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.1V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

1.1mm

Length

6.1mm

Width

5.35 mm

Automotive Standard

No

Infineon OptiMOS™P P-Channel Power MOSFETs


The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode

Avalanche rated

Low switching and conduction power losses

Pb-free lead plating; RoHS compliant

Standard packages

OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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