Infineon OptiMOS P Type P-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin TDSON

N° de stock RS:: 178-7488
Référence fabricant:: BSC030P03NS3GAUMA1
Fabricant:: Infineon

Infineon OptiMOS P Type P-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin TDSON

Sous-total (1 bobine de 5000 unités)*

3 620,00 €

(TVA exclue)

4 380,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 12 février 2027

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Unité	Prix par unité	la bobine*
5000 +	0,724 €	3 620,00 €

*Prix donné à titre indicatif

N° de stock RS:: 178-7488
Référence fabricant:: BSC030P03NS3GAUMA1
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	100A
	Maximum Drain Source Voltage Vds	30V
	Package Type	TDSON
	Series	OptiMOS P
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	4.6mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	125W
	Typical Gate Charge Qg @ Vgs	140nC
	Forward Voltage Vf	-1.1V
	Maximum Operating Temperature	150°C
	Height	1.1mm
	Length	6.1mm
	Standards/Approvals	No
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 100A
	Maximum Drain Source Voltage Vds 30V
	Package Type TDSON
	Series OptiMOS P
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 4.6mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 125W
	Typical Gate Charge Qg @ Vgs 140nC
	Forward Voltage Vf -1.1V
	Maximum Operating Temperature 150°C
	Height 1.1mm
	Length 6.1mm
	Standards/Approvals No
	Automotive Standard No

BSC030P03NS3G OptiMOS P3 Power-Transistor

Infineon OptiMOS P Series MOSFET, 30V Maximum Drain Source Voltage, 100A Maximum Continuous Drain Current - BSC030P03NS3GAUMA1

This MOSFET is a power-switching transistor designed for surface-mount applications requiring high current handling and thermal range. It operates as a P-channel enhancement device for control of power rails and switching stages in demanding environments, offering a balance of switching capability and continuous current capacity across a wide temperature span.

Features and Benefits:

• 100A continuous drain current enables high-load switching
• 125W maximum power dissipation supports heavy-duty thermal loads
• 4.6 mΩ low Rds(on) reduces conduction losses
• 30V maximum Vds allows mid-voltage power rail control
• 140 nC typical gate charge balances drive effort and switching speed
• 25V gate tolerance permits robust gate-drive margins

Applications

• Suitable for high-current power distribution modules
• Ideal for synchronous rectification in supplies
• Used with battery-management and power-conversion systems
• Can be used for motor-drive low-side switching
• Used for thermally stressed electronics across wide temperatures

What package type should I plan for on the PCB?

It comes in an 8-pin TDSON surface-mount package that requires a footprint matching an 8-pin thermal pad and surrounding lands for solderability and heat transfer.

How does ambient temperature affect allowable operation?

Rated to operate from -55°C up to 150°C, it maintains functionality across extreme cold and elevated junction conditions though thermal management will determine dynamic current limits.

What gate-drive considerations are important for switching performance?

Expect a typical total gate charge of 140 nC which informs driver sizing

drivers must provide sufficient current to switch within desired transition times while observing the 25V maximum gate-source rating.

What forward-voltage characteristic impacts reverse-conduction?

The device presents a forward voltage of -1.1V during conduction in the relevant direction, which influences conduction losses in freewheeling or synchronous configurations.