Infineon Isolated OptiMOS 2 2 Type N-Channel MOSFET, 950 mA, 20 V Enhancement, 6-Pin SC-88 BSD235NH6327XTSA1
- N° de stock RS:
- 165-5872
- Référence fabricant:
- BSD235NH6327XTSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 bobine de 3000 unités)*
297,00 €
(TVA exclue)
360,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 6 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 - 3000 | 0,099 € | 297,00 € |
| 6000 - 6000 | 0,094 € | 282,00 € |
| 9000 + | 0,088 € | 264,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 165-5872
- Référence fabricant:
- BSD235NH6327XTSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 950mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | OptiMOS 2 | |
| Package Type | SC-88 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 500mW | |
| Typical Gate Charge Qg @ Vgs | 0.32nC | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Forward Voltage Vf | 0.9V | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 0.8mm | |
| Length | 2mm | |
| Width | 1.25 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 950mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Series OptiMOS 2 | ||
Package Type SC-88 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 500mW | ||
Typical Gate Charge Qg @ Vgs 0.32nC | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Forward Voltage Vf 0.9V | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 0.8mm | ||
Length 2mm | ||
Width 1.25 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- CN
Infineon OptiMOS™2 Power MOSFET Family
Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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