Infineon OptiMOS 2 Type N-Channel MOSFET, 2.5 A, 20 V Enhancement, 3-Pin SOT-23

N° de stock RS:: 145-9547
Référence fabricant:: BSS205NH6327XTSA1
Fabricant:: Infineon

Infineon OptiMOS 2 Type N-Channel MOSFET, 2.5 A, 20 V Enhancement, 3-Pin SOT-23

Offre groupée disponible

Sous-total (1 bobine de 3000 unités)*

276,00 €

(TVA exclue)

333,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 75,00 €

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3 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution

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Unité	Prix par unité	la bobine*
3000 - 3000	0,092 €	276,00 €
6000 - 6000	0,087 €	261,00 €
9000 +	0,082 €	246,00 €

*Prix donné à titre indicatif

N° de stock RS:: 145-9547
Référence fabricant:: BSS205NH6327XTSA1
Fabricant:: Infineon

Spécifications

Documentation technique

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	2.5A
	Maximum Drain Source Voltage Vds	20V
	Package Type	SOT-23
	Series	OptiMOS 2
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	85mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	2.1nC
	Forward Voltage Vf	1.1V
	Maximum Gate Source Voltage Vgs	12 V
	Maximum Power Dissipation Pd	500mW
	Maximum Operating Temperature	150°C
	Length	2.9mm
	Standards/Approvals	No
	Width	0.1 mm
	Height	1.3mm
	Automotive Standard	AEC-Q101

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 2.5A
	Maximum Drain Source Voltage Vds 20V
	Package Type SOT-23
	Series OptiMOS 2
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 85mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 2.1nC
	Forward Voltage Vf 1.1V
	Maximum Gate Source Voltage Vgs 12 V
	Maximum Power Dissipation Pd 500mW
	Maximum Operating Temperature 150°C
	Length 2.9mm
	Standards/Approvals No
	Width 0.1 mm
	Height 1.3mm
	Automotive Standard AEC-Q101

Pays d'origine :: CN

Infineon OptiMOS™ 2 Series MOSFET, 2.5A Maximum Continuous Drain Current, 500 mW Maximum Power Dissipation - BSS205NH6327XTSA1

This N-channel MOSFET is a VITAL component in contemporary electronic applications, especially in automation and automotive sectors. Designed for efficient switching applications, it features a Compact SOT-23 surface mount package. Its capacity to handle significant drain currents and voltages makes it suitable for industrial and automotive contexts, ensuring consistent performance.

Features & Benefits

• Maximum continuous drain current of 2.5A

• Maximum drain-source voltage of 20V

• Minimal Rds(on) of 85 mΩ enhances power efficiency

• Qualified to AEC-Q101 for automotive applications

Applications

• Used in automotive power management systems

• Suitable for DC-DC converters in electronic devices

• Employed in motor control for efficient switching

• Ideal for power amplification in RF

What kind of protection does this offer against voltage spikes?

It is avalanche rated and can handle high energy pulses, providing protection in dynamic environments.

What is the significance of the low Rds(on) in this device?

A low on-state resistance improves power loss management and enhances efficiency, making it suitable for high-efficiency applications.

How can this be installed on a circuit board?

It can be soldered onto a PCB in the SOT-23 package, ensuring secure mounting for surface-mount technology applications.

What are the typical switching characteristics at the rated voltage?

The device displays quick turn-on and turn-off times, improving switching efficiency in high-speed applications.

Is this compatible with other components in automotive circuits?

Yes, it meets automotive standards and functions effectively with various devices in power management circuits.