Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 700 mA, 20 V Enhancement, 6-Pin SC-70-6 SI1553CDL-T1-GE3

N° de stock RS:: 812-3094
Référence fabricant:: SI1553CDL-T1-GE3
Fabricant:: Vishay

Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 700 mA, 20 V Enhancement, 6-Pin SC-70-6 SI1553CDL-T1-GE3

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5,78 €

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7,00 €

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Unité	Prix par unité	le paquet*
20 +	0,289 €	5,78 €

*Prix donné à titre indicatif

N° de stock RS:: 812-3094
Référence fabricant:: SI1553CDL-T1-GE3
Fabricant:: Vishay

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type P, Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	700mA
	Maximum Drain Source Voltage Vds	20V
	Series	TrenchFET
	Package Type	SC-70-6
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	1.48mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	12, -12V
	Maximum Power Dissipation Pd	340mW
	Typical Gate Charge Qg @ Vgs	1.2nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Transistor Configuration	Isolated
	Width	1.35mm
	Length	2.2mm
	Standards/Approvals	No
	Height	1mm
	Number of Elements per Chip	2
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Channel Type Type P, Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 700mA
	Maximum Drain Source Voltage Vds 20V
	Series TrenchFET
	Package Type SC-70-6
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 1.48mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 12, -12V
	Maximum Power Dissipation Pd 340mW
	Typical Gate Charge Qg @ Vgs 1.2nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Transistor Configuration Isolated
	Width 1.35mm
	Length 2.2mm
	Standards/Approvals No
	Height 1mm
	Number of Elements per Chip 2
	Automotive Standard No

Vishay TrenchFET Series MOSFET, 20V Maximum Drain Source Voltage, 700mA Maximum Continuous Drain Current - SI1553CDL-T1-GE3

This MOSFET is a compact dual-channel surface-mount transistor designed for switching and analogue tasks in small-outline assemblies. It integrates both P-channel and N-channel devices on a single chip, enabling complementary switching topologies and simplified footprint requirements for designers working with low-voltage power rails and signal-level switching.

Features and Benefits:

• Very low Rds(on) of 1.48mΩ for reduced conduction losses
• Typical gate charge Qg of 1.2nC for faster gate-drive response
• Continuous drain current rating of 700mA for moderate-load switching
• Maximum Vds of 20V to support low-voltage power domains
• Power dissipation capability of 340mW to manage thermal loads

Applications

• Suitable for battery management and power-distribution circuits
• Ideal for load switching in portable instrumentation
• Used with level-shifting and complementary FET stages
• Can be used for low-voltage motor-control driver stages

What package style does it use and how many pins are present?

It comes in a six-pin SC-70 SMD package which conserves board area while providing separate terminals for dual devices.

What gate voltage limits should the design respect?

Gate-to-source voltage must be contained within ±12V to prevent device stress and ensure safe operation.

What operating temperature range can be expected in deployment?

It tolerates a wide ambient span from -55°C up to 150°C, supporting demanding thermal environments.

Does the device include multiple elements per die and how does that affect layout?

The chip houses two discrete elements, enabling mirrored routing for complementary circuits and reducing component count.