STMicroelectronics STB Series N channel-Channel MOSFET, 56 A, 250 V Enhancement Mode, 3-Pin TO-263 STB25N018M9
- N° de stock RS:
- 839-144
- Référence fabricant:
- STB25N018M9
- Fabricant:
- STMicroelectronics
Visuel non contractuel
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
5,52 €
(TVA exclue)
6,68 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 27 novembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 5,52 € |
| 10 - 99 | 3,62 € |
| 100 - 499 | 2,68 € |
| 500 - 999 | 2,41 € |
| 1000 + | 2,03 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 839-144
- Référence fabricant:
- STB25N018M9
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 56A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | TO-263 | |
| Series | STB Series | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Channel Mode | Enhancement Mode | |
| Typical Gate Charge Qg @ Vgs | 85nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 320W | |
| Forward Voltage Vf | 1.6V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Width | 10mm | |
| Standards/Approvals | ROHS | |
| Height | 4.5mm | |
| Length | 10.3mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 56A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type TO-263 | ||
Series STB Series | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Channel Mode Enhancement Mode | ||
Typical Gate Charge Qg @ Vgs 85nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 320W | ||
Forward Voltage Vf 1.6V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Width 10mm | ||
Standards/Approvals ROHS | ||
Height 4.5mm | ||
Length 10.3mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The STMicroelectronics Power MOSFET is an N-channel super-junction component built on Advanced MDmesh M9 technology. It enables smaller more Compact layouts without compromising thermal capacity.
D2PAK surface-mount assembly package style
Silicon-based multi-drain manufacturing process
Low gate charge with outstanding efficiency
Enhanced dv/dt capability and avalanche tested
Liens connexes
- Coral G950-06809-01 for use with Raspberry Pi
- Siemens SIMATIC S7-1200 Series PLC CPU for Use with SIMATIC S7-1200 Series Transistor Output 2
- Carling Technologies Illuminated DPDT, On-(On) Rocker Switch Panel Mount
- SICK Encoder Collets for Use with DBS36E-BBxxxx
- Littelfuse Through Hole Gas Discharge Tube
- Igus GFM-0607-08 6mm Bore Plain Bearing, 7mm O.D
- Raspberry Pi QWERTY (Spain) Raspberry Pi Keyboard
- Coral Google Mini PCIe M.2 Accelerator B/M Development Kit G650-04686-01