STMicroelectronics STB Type N-Channel MOSFET, 30 A, 600 V Enhancement, 2-Pin TO-263 STB45N60DM6
- N° de stock RS:
- 214-851
- Référence fabricant:
- STB45N60DM6
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 unité)*
6,04 €
(TVA exclue)
7,31 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- 990 unité(s) expédiée(s) à partir du 18 février 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 6,04 € |
| 10 - 99 | 5,44 € |
| 100 - 499 | 5,00 € |
| 500 + | 4,64 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 214-851
- Référence fabricant:
- STB45N60DM6
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-263 | |
| Series | STB | |
| Mount Type | Surface | |
| Pin Count | 2 | |
| Maximum Drain Source Resistance Rds | 99mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 210W | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 44nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 10.4 mm | |
| Length | 15.85mm | |
| Height | 4.6mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-263 | ||
Series STB | ||
Mount Type Surface | ||
Pin Count 2 | ||
Maximum Drain Source Resistance Rds 99mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 210W | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 44nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 10.4 mm | ||
Length 15.85mm | ||
Height 4.6mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The STMicroelectronics High-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Extremely high dv/dt ruggedness
Zener protected
Liens connexes
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