STMicroelectronics Type N-Channel MOSFET, 7 A, 650 V Enhancement, 3-Pin TO-263 STB43N65M5
- N° de stock RS:
- 188-8512
- Référence fabricant:
- STB43N65M5
- Fabricant:
- STMicroelectronics
Sous-total (1 paquet de 2 unités)*
17,23 €
(TVA exclue)
20,848 €
(TVA incluse)
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 + | 8,615 € | 17,23 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 188-8512
- Référence fabricant:
- STB43N65M5
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 630mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 70W | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Forward Voltage Vf | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 9.35 mm | |
| Height | 4.37mm | |
| Length | 10.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 630mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 70W | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Forward Voltage Vf 1.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 9.35 mm | ||
Height 4.37mm | ||
Length 10.4mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.
Extremely low RDS(on)
Low gate charge and input capacitance
Excellent switching performance
Applications
Switching applications
Liens connexes
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- ROHM SCT Type N-Channel MOSFET 650 V Enhancement, 7-Pin TO-263
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