Vishay SISS64DN N channel-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin PowerPAK 1212-8S SISS64DN-T1-BE3
- N° de stock RS:
- 736-354
- Référence fabricant:
- SISS64DN-T1-BE3
- Fabricant:
- Vishay
Sous-total (1 ruban de 1 unité)*
0,98 €
(TVA exclue)
1,19 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 02 juillet 2027
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Ruban(s) | le ruban |
|---|---|
| 1 + | 0,98 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 736-354
- Référence fabricant:
- SISS64DN-T1-BE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SISS64DN | |
| Package Type | PowerPAK 1212-8S | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0021Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Maximum Power Dissipation Pd | 57W | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.3mm | |
| Length | 3.3mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SISS64DN | ||
Package Type PowerPAK 1212-8S | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0021Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Maximum Power Dissipation Pd 57W | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Width 3.3mm | ||
Length 3.3mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- IL
The Vishay Power MOSFET delivers exceptional performance with its N-Channel configuration. Designed primarily for efficient switching applications, it optimises power management in various electronic circuits, ensuring reliable operation under demanding conditions.
Features TrenchFET Gen IV technology for enhanced efficiency
Optimised Qg, Qgd, and Qgs ratios reduce switching losses
Continuous drain current rating of up to 40A for robust performance
Liens connexes
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