Vishay SISS64DN N channel-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin PowerPAK 1212-8S SISS64DN-T1-BE3
- N° de stock RS:
- 736-354
- Référence fabricant:
- SISS64DN-T1-BE3
- Fabricant:
- Vishay
Sous-total (1 ruban de 1 unité)*
0,98 €
(TVA exclue)
1,19 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Ruban(s) | le ruban |
|---|---|
| 1 + | 0,98 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 736-354
- Référence fabricant:
- SISS64DN-T1-BE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK 1212-8S | |
| Series | SISS64DN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0021Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 57W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Standards/Approvals | RoHS | |
| Width | 3.3mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK 1212-8S | ||
Series SISS64DN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0021Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 57W | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Standards/Approvals RoHS | ||
Width 3.3mm | ||
Automotive Standard No | ||
- Pays d'origine :
- IL
The Vishay Power MOSFET delivers exceptional performance with its N-Channel configuration. Designed primarily for efficient switching applications, it optimises power management in various electronic circuits, ensuring reliable operation under demanding conditions.
Features TrenchFET Gen IV technology for enhanced efficiency
Optimised Qg, Qgd, and Qgs ratios reduce switching losses
Continuous drain current rating of up to 40A for robust performance
Liens connexes
- Vishay SISS64DN N channel-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212-8S SISS64DN-T1-UE3
- Vishay SISS52DN N channel-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212-8S SISS52DN-T1-BE3
- Vishay SISS26DN N channel-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212-8S SISS26DN-T1-BE3
- Vishay SISS30DN N channel-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK 1212-8S SISS30DN-T1-BE3
- Vishay TrenchFET N channel-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK 1212-8S SISS516DN-T1-UE3
- Vishay TrenchFET N channel-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK 1212-8S SISS586DN-T1-UE3
- Vishay SISS26DN N channel-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212-8S SISS26DN-T1-UE3
- Vishay Type N-Channel MOSFET 150 V Enhancement, 8-Pin PowerPAK 1212-8S SISS5708DN-T1-GE3