Vishay SISS26DN N channel-Channel MOSFET, 60 A, 60 V Enhancement, 8-Pin PowerPAK 1212-8S SISS26DN-T1-BE3
- N° de stock RS:
- 736-350
- Référence fabricant:
- SISS26DN-T1-BE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 ruban de 1 unité)*
1,80 €
(TVA exclue)
2,18 €
(TVA incluse)
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Ruban(s) | le ruban |
|---|---|
| 1 - 9 | 1,80 € |
| 10 - 24 | 1,18 € |
| 25 - 99 | 0,65 € |
| 100 - 499 | 0,64 € |
| 500 + | 0,62 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 736-350
- Référence fabricant:
- SISS26DN-T1-BE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK 1212-8S | |
| Series | SISS26DN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0045Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 24.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 57W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Standards/Approvals | RoHS | |
| Width | 3.3mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK 1212-8S | ||
Series SISS26DN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0045Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 24.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 57W | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Standards/Approvals RoHS | ||
Width 3.3mm | ||
Automotive Standard No | ||
- Pays d'origine :
- IL
The Vishay N-Channel MOSFET designed for efficient power management applications. It operates effectively at high voltages with low on-resistance, making it Ideal for synchronous rectification and DC-DC converters.
Rated for a drain-source voltage of 60 V, ensuring robust operation
Optimised for minimal power loss in various applications
Liens connexes
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