ROHM RH Type P-Channel MOSFET, 65 A, 80 V Depletion, 8-Pin HSMT-8 RH6N040BHTB1
- N° de stock RS:
- 265-155
- Référence fabricant:
- RH6N040BHTB1
- Fabricant:
- ROHM
Offre groupée disponible
Sous-total (1 ruban de 5 unités)*
4,35 €
(TVA exclue)
5,25 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 95 unité(s) expédiée(s) à partir du 04 mars 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le ruban* |
|---|---|---|
| 5 - 45 | 0,87 € | 4,35 € |
| 50 - 95 | 0,826 € | 4,13 € |
| 100 - 495 | 0,766 € | 3,83 € |
| 500 - 995 | 0,706 € | 3,53 € |
| 1000 + | 0,68 € | 3,40 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 265-155
- Référence fabricant:
- RH6N040BHTB1
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 65A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | HSMT-8 | |
| Series | RH | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8.3mΩ | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Power Dissipation Pd | 59W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 65A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type HSMT-8 | ||
Series RH | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8.3mΩ | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Power Dissipation Pd 59W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ROHM MOSFET is a cutting-edge semiconductor designed to deliver exceptional performance and reliability for various applications. This component features a high power small mould package, optimising space without compromising functionality. With a low on-resistance, it ensures efficient power management, making it perfect for use in motor drives and DC/DC converters.
High power capacity for demanding applications
Tested for robust gate charge characteristics enhancing switching performance
Ideal for various applications including motor drives
Comprehensive maximum ratings provide confidence in operational limits
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