ROHM HT8KB6 1 Type P-Channel MOSFET, 15 A, 40 V Depletion, 8-Pin HSMT-8 HT8KB6TB1
- N° de stock RS:
- 265-123
- Référence fabricant:
- HT8KB6TB1
- Fabricant:
- ROHM
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 ruban de 10 unités)*
7,05 €
(TVA exclue)
8,53 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 100 unité(s) expédiée(s) à partir du 31 août 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le ruban* |
|---|---|---|
| 10 - 90 | 0,705 € | 7,05 € |
| 100 - 240 | 0,67 € | 6,70 € |
| 250 - 490 | 0,62 € | 6,20 € |
| 500 - 990 | 0,571 € | 5,71 € |
| 1000 + | 0,55 € | 5,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 265-123
- Référence fabricant:
- HT8KB6TB1
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | HSMT-8 | |
| Series | HT8KB6 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 17.2mΩ | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 10.6nC | |
| Maximum Power Dissipation Pd | 14W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type HSMT-8 | ||
Series HT8KB6 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 17.2mΩ | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 10.6nC | ||
Maximum Power Dissipation Pd 14W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
The ROHM MOSFET is designed for demanding applications that require exceptional efficiency and reliability. The product's robust design, featuring a low on-resistance and high power capacity, positions it as an ideal choice for motor drives and other power management needs. It stands out with its compact HSMT8 packaging, ensuring ease of integration into various electronic systems.
Halogen free design supports compliance with global environmental standards
Guaranteed 100% Rg and UIS testing for enhanced reliability
Wide operating junction temperature range allows for versatile applications
High pulsed drain current capability supports demanding operational profiles
Liens connexes
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