ROHM RF9P120BKFRA N-Channel Single MOSFETs, 12 A, 100 V Enhancement, 6-Pin DFN2020Y7LSAA RF9P120BKFRATCR
- N° de stock RS:
- 687-387
- Référence fabricant:
- RF9P120BKFRATCR
- Fabricant:
- ROHM
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 ruban de 2 unités)*
2,94 €
(TVA exclue)
3,56 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 3 000 unité(s) expédiée(s) à partir du 12 octobre 2026
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Unité | Prix par unité | le ruban* |
|---|---|---|
| 2 - 18 | 1,47 € | 2,94 € |
| 20 - 48 | 1,29 € | 2,58 € |
| 50 - 198 | 1,165 € | 2,33 € |
| 200 - 998 | 0,93 € | 1,86 € |
| 1000 + | 0,92 € | 1,84 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 687-387
- Référence fabricant:
- RF9P120BKFRATCR
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Channel Type | N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | DFN2020Y7LSAA | |
| Series | RF9P120BKFRA | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 58mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 6.9nC | |
| Maximum Power Dissipation Pd | 23W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.1mm | |
| Height | 650μm | |
| Standards/Approvals | RoHS | |
| Length | 2.1mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Channel Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type DFN2020Y7LSAA | ||
Series RF9P120BKFRA | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 58mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 6.9nC | ||
Maximum Power Dissipation Pd 23W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 2.1mm | ||
Height 650μm | ||
Standards/Approvals RoHS | ||
Length 2.1mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM N channel power MOSFET designed for efficient switching in various applications including automotive, lighting, and body electronics. Engineered to support a robust continuous drain current of ±12A and a maximum Drain-Source voltage of 100V, this component excels in environments demanding reliability and efficiency. Its advanced design features low on-resistance and high power density, ensuring optimal performance while complying with AEC-Q101 standards and RoHS regulations. The compact DFN2020Y7LSAA package further allows easy integration into space-constrained designs, making it a versatile choice for modern electronic solutions.
AEC Q101 qualified for automotive applications, ensuring reliability
Low on resistance (RDS(on)), enhancing efficiency during operation
Supports a Drain-Source voltage of 100V suitable for high-voltage applications
Continuous drain current of ±12A, capable of handling demanding loads
Disposes of Pb free plating, ensuring compliance with environmental standards
Halogen free, contributing to eco-friendly product design
High power density with a maximum power dissipation of 23W, optimising thermal performance
Liens connexes
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