ROHM RY7P250BM Type N-Channel Single MOSFETs, 100 V Enhancement, 8-Pin DFN8080T8LSHAAI RY7P250BMTBC

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Sous-total (1 ruban de 2 unités)*

11,40 €

(TVA exclue)

13,80 €

(TVA incluse)

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  • Expédition à partir du 19 juin 2026
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Unité
Prix par unité
le ruban*
2 - 185,70 €11,40 €
20 - 985,015 €10,03 €
100 - 1984,505 €9,01 €
200 +3,54 €7,08 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
687-343
Référence fabricant:
RY7P250BMTBC
Fabricant:
ROHM
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Marque

ROHM

Channel Type

Type N

Product Type

Single MOSFETs

Maximum Drain Source Voltage Vds

100V

Package Type

DFN8080T8LSHAAI

Series

RY7P250BM

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.86mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

340W

Typical Gate Charge Qg @ Vgs

240nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Height

0.8mm

Width

1.70 mm

Length

1.7mm

Automotive Standard

No

Pays d'origine :
JP
The ROHM Power MOSFET designed for demanding applications requiring excellent efficiency and reliability. This MOSFET is ideal for use in Hot Swap Controllers and other power switching applications, where its low on-resistance of 1.86mΩ ensures minimal energy loss during operation. This component is RoHS and halogen-free, making it a safe choice for environmentally conscious designs. With advanced features like 100% Rg and UIS testing, it guarantees robust performance under varying conditions, making it suitable for high-performance and high-reliability electronic circuits.

Low on resistance for enhanced efficiency

Wide-SOA characteristics for superior reliability

Designed to handle continuous drain currents up to 250A

High pulsed drain current capability at ±900A

Excellent thermal management with thermal resistance of 0.44°C/W

Suitable for a wide operating temperature range of -55 to +175°C

Complies with RoHS and halogen-free standards.

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