Vishay SISS32LDN Type N-Channel Single MOSFETs, 63 A, 80 V Enhancement, 8-Pin PowerPAK SISS32LDN-T1-BE3

N° de stock RS:: 653-103
Référence fabricant:: SISS32LDN-T1-BE3
Fabricant:: Vishay

Vishay SISS32LDN Type N-Channel Single MOSFETs, 63 A, 80 V Enhancement, 8-Pin PowerPAK SISS32LDN-T1-BE3

Sous-total (1 bobine de 3000 unités)*

1 986,00 €

(TVA exclue)

2 403,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Dernier stock RS

6 000 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution

Unité	Prix par unité	la bobine*
3000 +	0,662 €	1 986,00 €

*Prix donné à titre indicatif

N° de stock RS:: 653-103
Référence fabricant:: SISS32LDN-T1-BE3
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Product Type	Single MOSFETs
	Channel Type	Type N
	Maximum Continuous Drain Current Id	63A
	Maximum Drain Source Voltage Vds	80V
	Series	SISS32LDN
	Package Type	PowerPAK
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.0072Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	65.7W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.1V
	Typical Gate Charge Qg @ Vgs	17.7nC
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	150°C
	Height	0.75mm
	Length	3.3mm
	Standards/Approvals	RoHS
	Width	3.3mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Product Type Single MOSFETs
	Channel Type Type N
	Maximum Continuous Drain Current Id 63A
	Maximum Drain Source Voltage Vds 80V
	Series SISS32LDN
	Package Type PowerPAK
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.0072Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 65.7W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.1V
	Typical Gate Charge Qg @ Vgs 17.7nC
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 150°C
	Height 0.75mm
	Length 3.3mm
	Standards/Approvals RoHS
	Width 3.3mm
	Automotive Standard No

Datasheet - SISS32LDN-T1-BE3

Pays d'origine :: TH

Vishay SISS32LDN Series Single MOSFETs, 80V Maximum Drain Source Voltage, 63A Maximum Continuous Drain Current - SISS32LDN-T1-BE3

This single MOSFET is a compact N-channel enhancement device designed for high-current switching in surface-mount applications. It operates across a wide temperature range and is intended for use where efficient conduction and robust voltage handling are required. The device is suitable for power conversion and switching stages in electronic systems that demand low conduction losses and moderate switching energy.

Features and Benefits:

• Very low Rds(on) 0.0072Ω reduces conduction losses under load
• 80V drain-source rating supports high-voltage switching tasks
• Continuous drain current 63A enables substantial load handling
• Maximum power dissipation 65.7W allows sustained thermal performance
• Gate charge 17.7nC facilitates predictable switching behaviour
• Forward voltage 1.1V minimises drop during conduction

Applications

• Suitable for 80V DC-DC converter switching stages
• Ideal for high-current synchronous rectification designs
• Used with power trains in industrial motor controllers
• Can be used for load switching in server power supplies
• Suitable for compact SMD power modules and assemblies

What mounting style does it require for assembly?

It is supplied in a PowerPAK surface-mount package intended for reflow soldering onto PCB land patterns.

How does it perform thermally at elevated temperatures?

The device is specified to operate up to 150°C junction temperature, enabling use in thermally demanding environments when appropriate thermal management is applied.

What gate voltage limits should be observed during drive?

The maximum gate-to-source voltage is 20V, so gate-drive circuitry should remain within this limit to avoid device stress.

Is it suitable for automotive-qualified designs?

It is not classified as an automotive-standard device

designers should assess qualification needs against system requirements.