Vishay SISS32LDN Type N-Channel Single MOSFETs, 63 A, 80 V Enhancement, 8-Pin PowerPAK SISS32LDN-T1-BE3

N° de stock RS:: 653-103
Référence fabricant:: SISS32LDN-T1-BE3
Fabricant:: Vishay

Vishay SISS32LDN Type N-Channel Single MOSFETs, 63 A, 80 V Enhancement, 8-Pin PowerPAK SISS32LDN-T1-BE3

Sous-total (1 bobine de 3000 unités)*

1 986,00 €

(TVA exclue)

2 403,00 €

(TVA incluse)

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Unité	Prix par unité	la bobine*
3000 +	0,662 €	1 986,00 €

*Prix donné à titre indicatif

N° de stock RS:: 653-103
Référence fabricant:: SISS32LDN-T1-BE3
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type N
	Product Type	Single MOSFETs
	Maximum Continuous Drain Current Id	63A
	Maximum Drain Source Voltage Vds	80V
	Package Type	PowerPAK
	Series	SISS32LDN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.0072Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	65.7W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	17.7nC
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1.1V
	Maximum Operating Temperature	150°C
	Length	3.3mm
	Standards/Approvals	RoHS
	Width	3.3mm
	Height	0.75mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Channel Type Type N
	Product Type Single MOSFETs
	Maximum Continuous Drain Current Id 63A
	Maximum Drain Source Voltage Vds 80V
	Package Type PowerPAK
	Series SISS32LDN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.0072Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 65.7W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 17.7nC
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1.1V
	Maximum Operating Temperature 150°C
	Length 3.3mm
	Standards/Approvals RoHS
	Width 3.3mm
	Height 0.75mm
	Automotive Standard No

Datasheet - SISS32LDN-T1-BE3

Pays d'origine :: TH

Vishay SISS32LDN Series Single MOSFETs, 80V Maximum Drain Source Voltage, 63A Maximum Continuous Drain Current - SISS32LDN-T1-BE3

This single MOSFETs device is a high-current N-channel transistor designed for surface-mount power switching in industrial electronics. It operates as an enhancement-mode MOSFET suitable for driving and switching applications where elevated drain-source voltage and robust current handling are required. The component is supplied in a Compact PowerPAK package intended for SMD assembly and complies with RoHS requirements.

Features and Benefits:

• 80V drain-source rating enables high-voltage switching capability • 63A continuous drain current supports heavy-load conduction • Low RDS(on) 0.0072Ω minimises conduction losses under load • 65.7W power dissipation allows sustained thermal throughput • 17.7nC typical gate charge affords controlled switching energy • 150°C maximum operating temperature permits high-temperature operation

Applications

• Suitable for motor-drive half-bridge stages in automation systems • Ideal for DC-DC converters in power distribution modules • Used for load switching in industrial control equipment • Can be used for battery management and high-current distribution

What gate-voltage limits should designers observe?

The gate-to-source voltage must not exceed ±20V to prevent gate-dielectric stress.

What thermal considerations apply during PCB layout?

Given the 65.7W dissipation rating, designers should provide adequate copper area and thermal vias for heat spreading and connect to a heatsinking plane where necessary.

How does switching behaviour impact electromagnetic emissions?

The 17.7nC gate charge influences rise and fall times

controlling gate-drive slew rates and adding snubbers helps manage switching transients and EMI.

What ambient extremes can the device tolerate during operation?

It is specified for use down to -55°C and up to 150°C junction temperature for broad environmental range compatibility.