Microchip Electrically Isolated N Channel and P Channel Pairs (2 Pairs) TC7920 1 N channel, P-Channel MOSFET Arrays, 1.8
- N° de stock RS:
- 598-568
- Référence fabricant:
- TC7920K6-G
- Fabricant:
- Microchip
Sous-total (1 bobine de 3300 unités)*
7 665,90 €
(TVA exclue)
9 276,30 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3300 + | 2,323 € | 7 665,90 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 598-568
- Référence fabricant:
- TC7920K6-G
- Fabricant:
- Microchip
Spécifications
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Microchip | |
| Product Type | MOSFET Arrays | |
| Channel Type | N channel, P-Channel | |
| Maximum Continuous Drain Current Id | 1.8A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | TC7920 | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 12Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.8V | |
| Transistor Configuration | Electrically Isolated N Channel and P Channel Pairs (2 Pairs) | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Certificate of Compliance | |
| Height | 1mm | |
| Width | 4.15 mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Microchip | ||
Product Type MOSFET Arrays | ||
Channel Type N channel, P-Channel | ||
Maximum Continuous Drain Current Id 1.8A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series TC7920 | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 12Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.8V | ||
Transistor Configuration Electrically Isolated N Channel and P Channel Pairs (2 Pairs) | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Certificate of Compliance | ||
Height 1mm | ||
Width 4.15 mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The Microchip High voltage, low-threshold N-channel and P-channel MOSFETs in a 12-lead DFN package feature integrated output drain high-voltage diodes, gate-to-source resistors, and gate-to-source Zener diode clamps, making them ideal for high-voltage pulser applications. These complementary, high-speed, high-voltage, gate-clamped MOSFET pairs use an advanced vertical DMOS structure and a proven silicon-gate manufacturing process. This combination delivers the power handling capabilities of bipolar transistors, along with the high input impedance and positive temperature coefficient characteristic of MOS devices.
Integrated gate to source resistor
Integrated gate to source Zener diode
Low threshold, low on-resistance
Low input and output capacitance
Fast switching speeds
Liens connexes
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