Microchip Two Pairs of N and P Channel TC8220 1 P-Channel, N channel-Channel MOSFET Arrays, 2.3 A, 200 V Enhancement,
- N° de stock RS:
- 598-776
- Référence fabricant:
- TC8220K6-G
- Fabricant:
- Microchip
Sous-total (1 bobine de 3300 unités)*
8 180,70 €
(TVA exclue)
9 900,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 16 février 2026
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 3300 + | 2,479 € | 8 180,70 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 598-776
- Référence fabricant:
- TC8220K6-G
- Fabricant:
- Microchip
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Microchip | |
| Channel Type | P-Channel, N channel | |
| Product Type | MOSFET Arrays | |
| Maximum Continuous Drain Current Id | 2.3A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | TC8220 | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 8.5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±25 V | |
| Transistor Configuration | Two Pairs of N and P Channel | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Certificate of Compliance | |
| Height | 1mm | |
| Length | 4mm | |
| Width | 4 mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Microchip | ||
Channel Type P-Channel, N channel | ||
Product Type MOSFET Arrays | ||
Maximum Continuous Drain Current Id 2.3A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series TC8220 | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 8.5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±25 V | ||
Transistor Configuration Two Pairs of N and P Channel | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Certificate of Compliance | ||
Height 1mm | ||
Length 4mm | ||
Width 4 mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The Microchip High-voltage, low-threshold N-channel and P-channel MOSFETs in a 12-lead DFN package feature integrated gate-to-source resistors and gate-to-source Zener diode clamps, ideal for high-voltage pulser applications. These complementary, high-speed, high-voltage, gate-clamped N-channel and P-channel MOSFET pairs utilize an advanced vertical DMOS structure along with Supertex’s proven silicon-gate manufacturing process. This combination offers the power handling capabilities of bipolar transistors, while also providing the high input impedance and positive temperature coefficient typical of MOS devices.
Integrated gate to source resistor
Integrated gate to source Zener diode
Low threshold, low on-resistance
Low input and output capacitance
Fast switching speeds
Liens connexes
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