Microchip Independent N Channel and P Channel Mosfet TC2320 1 P-Channel, N channel-Channel MOSFET Arrays, 2.1 A
- N° de stock RS:
- 598-027
- Référence fabricant:
- TC2320TG-G
- Fabricant:
- Microchip
Sous-total (1 bobine de 3300 unités)*
6 019,20 €
(TVA exclue)
7 283,10 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 13 juillet 2026
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 3300 + | 1,824 € | 6 019,20 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 598-027
- Référence fabricant:
- TC2320TG-G
- Fabricant:
- Microchip
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Microchip | |
| Product Type | MOSFET Arrays | |
| Channel Type | P-Channel, N channel | |
| Maximum Continuous Drain Current Id | 2.1A | |
| Series | TC2320 | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 12Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.8V | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Independent N Channel and P Channel Mosfet | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Certificate of Compliance | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Microchip | ||
Product Type MOSFET Arrays | ||
Channel Type P-Channel, N channel | ||
Maximum Continuous Drain Current Id 2.1A | ||
Series TC2320 | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 12Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.8V | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Independent N Channel and P Channel Mosfet | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Certificate of Compliance | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
The Microchip High-voltage, low-threshold N-channel and P-channel MOSFET in an 8-lead SOIC package is an enhancement-mode (normally-off) transistor that utilizes an advanced vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination provides the power handling capabilities of bipolar transistors while maintaining high input impedance and a positive temperature coefficient, typical of MOS devices. As with all MOS structures, the device is free from thermal runaway and thermally induced secondary breakdown, ensuring reliable performance.
Low threshold
Low on resistance
Low input capacitance
Fast switching speeds
Free from secondary breakdown
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