Microchip Complementary Pair TC6320 1 P-Channel, N channel-Channel MOSFET Arrays, 2 A, 200 V Enhancement, 8-Pin VDFN
- N° de stock RS:
- 598-279
- Référence fabricant:
- TC6320K6-G
- Fabricant:
- Microchip
Sous-total (1 bobine de 3300 unités)*
7 260,00 €
(TVA exclue)
8 778,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 16 mars 2026
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 3300 + | 2,20 € | 7 260,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 598-279
- Référence fabricant:
- TC6320K6-G
- Fabricant:
- Microchip
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Microchip | |
| Channel Type | P-Channel, N channel | |
| Product Type | MOSFET Arrays | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | VDFN | |
| Series | TC6320 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.8V | |
| Transistor Configuration | Complementary Pair | |
| Height | 1.35mm | |
| Width | 0.31 mm | |
| Standards/Approvals | RoHS Certificate of Compliance | |
| Length | 0.40mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Microchip | ||
Channel Type P-Channel, N channel | ||
Product Type MOSFET Arrays | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type VDFN | ||
Series TC6320 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.8V | ||
Transistor Configuration Complementary Pair | ||
Height 1.35mm | ||
Width 0.31 mm | ||
Standards/Approvals RoHS Certificate of Compliance | ||
Length 0.40mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- Pays d'origine :
- TH
The Microchip High-voltage, low-threshold N-channel and P-channel MOSFETs in 8-lead VDFN and SOIC packages feature integrated gate-to-source resistors and gate-to-source Zener diode clamps, making them ideal for high-voltage pulser applications. This complementary, high-speed, high-voltage, gate-clamped N-channel and P-channel MOSFET pair uses an advanced vertical DMOS structure and a proven silicon gate manufacturing process. The combination offers the power handling capabilities of bipolar transistors along with the high input impedance and positive temperature coefficient typical of MOS devices. As with all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown.
Low threshold
Low on resistance
Low input capacitance
Fast switching speeds
Free from secondary breakdown
Low input and output leakage
Liens connexes
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- DiodesZetex DMT Type N-Channel MOSFET 60 V Enhancement, 8-Pin VDFN
- DiodesZetex DMT Type N-Channel MOSFET 60 V Enhancement, 8-Pin VDFN DMT64M8LCG-7
- Microchip TC1550 1 P-Channel 350 mA 8-Pin 8-Lead SOIC (TG)