Infineon ISA Dual N-Channel MOSFET, 9.6 A, 40 V Enhancement, 8-Pin PG-DSO-8 ISA170170N04LMDSXTMA1
- N° de stock RS:
- 348-912
- Référence fabricant:
- ISA170170N04LMDSXTMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 20 unités)*
10,52 €
(TVA exclue)
12,72 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 3 980 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 20 - 180 | 0,526 € | 10,52 € |
| 200 - 480 | 0,50 € | 10,00 € |
| 500 - 980 | 0,463 € | 9,26 € |
| 1000 - 1980 | 0,426 € | 8,52 € |
| 2000 + | 0,41 € | 8,20 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 348-912
- Référence fabricant:
- ISA170170N04LMDSXTMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Dual N | |
| Maximum Continuous Drain Current Id | 9.6A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PG-DSO-8 | |
| Series | ISA | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 17mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.5W | |
| Typical Gate Charge Qg @ Vgs | 6nC | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC Standard | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Dual N | ||
Maximum Continuous Drain Current Id 9.6A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PG-DSO-8 | ||
Series ISA | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 17mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.5W | ||
Typical Gate Charge Qg @ Vgs 6nC | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC Standard | ||
- Pays d'origine :
- CN
The Infineon OptiMOS 3 Power Transistor is a dual N-channel, logic level MOSFET designed for high performance power applications. It features very low on-resistance (RDS(on)), which helps reduce conduction losses and increase overall system efficiency. Additionally, the transistor offers superior thermal resistance, ensuring better heat management and reliability in demanding conditions. This combination of features makes it ideal for applications requiring efficient power switching and thermal performance.
100% avalanche tested
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249‑2‑21
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