Infineon ISA Dual N-Channel MOSFET, 9.6 A, 40 V Enhancement, 8-Pin PG-DSO-8 ISA170170N04LMDSXTMA1
- N° de stock RS:
- 348-912
- Référence fabricant:
- ISA170170N04LMDSXTMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 20 unités)*
9,28 €
(TVA exclue)
11,22 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 3 960 unité(s) expédiée(s) à partir du 04 juin 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 20 - 180 | 0,464 € | 9,28 € |
| 200 - 480 | 0,441 € | 8,82 € |
| 500 - 980 | 0,408 € | 8,16 € |
| 1000 - 1980 | 0,376 € | 7,52 € |
| 2000 + | 0,362 € | 7,24 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 348-912
- Référence fabricant:
- ISA170170N04LMDSXTMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Dual N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9.6A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PG-DSO-8 | |
| Series | ISA | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 17mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 6nC | |
| Maximum Power Dissipation Pd | 2.5W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC Standard | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Dual N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9.6A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PG-DSO-8 | ||
Series ISA | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 17mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 6nC | ||
Maximum Power Dissipation Pd 2.5W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC Standard | ||
- Pays d'origine :
- CN
The Infineon OptiMOS 3 Power Transistor is a dual N-channel, logic level MOSFET designed for high performance power applications. It features very low on-resistance (RDS(on)), which helps reduce conduction losses and increase overall system efficiency. Additionally, the transistor offers superior thermal resistance, ensuring better heat management and reliability in demanding conditions. This combination of features makes it ideal for applications requiring efficient power switching and thermal performance.
100% avalanche tested
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249‑2‑21
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