Infineon ISZ Type N-Channel Power Transistor, 26 A, 200 V Enhancement, 8-Pin PG-TSDSON-8FL ISZ520N20NM6ATMA1
- N° de stock RS:
- 349-157
- Référence fabricant:
- ISZ520N20NM6ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
8,24 €
(TVA exclue)
9,97 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 5 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 1,648 € | 8,24 € |
| 50 - 95 | 1,568 € | 7,84 € |
| 100 - 495 | 1,45 € | 7,25 € |
| 500 - 995 | 1,334 € | 6,67 € |
| 1000 + | 1,286 € | 6,43 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-157
- Référence fabricant:
- ISZ520N20NM6ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | ISZ | |
| Package Type | PG-TSDSON-8FL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 52mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 9.9nC | |
| Maximum Power Dissipation Pd | 88W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249‑2‑21, JEDEC, J-STD-020, RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type Power Transistor | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series ISZ | ||
Package Type PG-TSDSON-8FL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 52mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 9.9nC | ||
Maximum Power Dissipation Pd 88W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249‑2‑21, JEDEC, J-STD-020, RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
The Infineon OptiMOS 6 MOSFET is setting the new technology standard. It addresses the need for high power density, high efficiency, and high reliability. The OptiMOS 6 200 V technology was designed for optimal performance in motor drive applications such as LEV, forklifts, and drones. The new OptiMOS 6 features industry leading RDS(on), improved switching and current sharing capability, enabling high power density, less paralleling, and excellent EMI performance.
Low conduction losses
Low switching losses
Stable operation with improved EMI
Less paralleling required
Better current sharing when paralleling
Environmentally friendly
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