Infineon OptiMOS 6 Power Transistor Type N-Channel MOSFET, 63 A, 120 V Enhancement, 8-Pin PG-TDSON-8 ISC104N12LM6ATMA1

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Actuellement indisponible
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N° de stock RS:
285-049
Référence fabricant:
ISC104N12LM6ATMA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

63A

Maximum Drain Source Voltage Vds

120V

Series

OptiMOS 6 Power Transistor

Package Type

PG-TDSON-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

10.4mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

94W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Infineon MOSFET is a premier power transistor designed for high efficiency applications. With its Advanced N channel logic level characteristics, it excels in providing very low on resistance, ensuring optimal energy savings during operation. The innovative SuperSO8 package enhances thermal management, making it ideally suited for high frequency switching tasks. This state of the ART component boasts excellent gate charge performance, significantly reducing the losses typically encountered in less sophisticated devices. Additionally, its compliance with RoHS and halogen free regulations guarantees a commitment to environmentally friendly technology.

N channel technology for superior performance

Low on resistance reduces power loss

Designed for high frequency switching

Complies with industry standards for reliability

RoHS and halogen free for eco friendliness

Handles high avalanche energy for robustness

Optimised for synchronous rectification

Enhanced thermal characteristics for better heat dissipation

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