Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 8-Pin PG-TSON-8 IQE046N08LM5ATMA1

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N° de stock RS:
285-042
Référence fabricant:
IQE046N08LM5ATMA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

99A

Maximum Drain Source Voltage Vds

80V

Series

OptiMOS

Package Type

PG-TSON-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

4.6mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

100W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Infineon MOSFET features an innovative power module is designed to offer high efficiency and reliability in various applications. With cutting edge technology, it ensures optimal performance while maintaining a Compact size, making it Ideal for modern electronic systems. The module's robust design allows it to handle demanding conditions, catering to industries that require Durable and efficient power solutions. Its excellent thermal management features and low power losses enhance its functionality, making it a go to choice for engineers and designers aiming for sustainability and performance. This product stands out by integrating versatility and ease of use, ensuring seamless integration into existing systems, while its user friendly attributes elevate the overall operational experience.

Maximises energy savings with high efficiency

Compact design for space saving installations

Durable construction for harsh environments

Optimised thermal performance reduces cooling needs

Versatile usage for various applications

User friendly for easy integration

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