Infineon OptiMOS Type N-Channel MOSFET, 56 A, 150 V Enhancement, 8-Pin PG-WSON-8 BSC160N15NS5SCATMA1

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N° de stock RS:
284-650
Référence fabricant:
BSC160N15NS5SCATMA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

56A

Maximum Drain Source Voltage Vds

150V

Series

OptiMOS

Package Type

PG-WSON-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

16mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

115W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Infineon OptiMOS Power MOSFET is engineered to deliver exceptional performance in high frequency switching applications. With a robust 150V rating, it serves as a reliable solution for industrial and automotive electronics. The dual side cooled PG WSON 8 package ensures minimal thermal resistance, allowing for efficient heat dissipation even under heavy load conditions. Designed for N channel operation, this MOSFET excels in synchronous rectification, making it Ideal for power management tasks where efficiency and reliability are paramount. Manufacturers can Trust this component to meet stringent requirements, delivering effective and stable performance in demanding environments.

Optimised for high frequency operation

Dual side cooling lowers thermal resistance

Pb free lead plating for RoHS compliance

Excellent gate charge performance boosts efficiency

Ideal for synchronous rectification applications

Operates at high temperatures without efficiency loss

Qualified to JEDEC standards for industry

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