Infineon OptiMOS N-Channel MOSFET, 381 A, 40 V Enhancement, 8-Pin PG-WSON-8 BSC007N04LS6SCATMA1
- N° de stock RS:
- 284-635
- Référence fabricant:
- BSC007N04LS6SCATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
3,58 €
(TVA exclue)
4,34 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 18 octobre 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 1,79 € | 3,58 € |
| 20 - 198 | 1,61 € | 3,22 € |
| 200 - 998 | 1,48 € | 2,96 € |
| 1000 - 1998 | 1,38 € | 2,76 € |
| 2000 + | 1,23 € | 2,46 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 284-635
- Référence fabricant:
- BSC007N04LS6SCATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 381A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PG-WSON-8 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 188W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 381A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PG-WSON-8 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 188W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
- Pays d'origine :
- AT
The Infineon MOSFET is a power transistor for high performance applications requiring robust efficiency and reliability. With its dual side cooled packaging, it boasts the lowest junction to TOP thermal resistance, enabling superior heat dissipation. The N channel design ensures optimal performance in synchronous applications, making it an Ideal choice for modern power management systems. Featuring a Pb free lead plating and RoHS compliance. Additionally, its high avalanche rating assures stability under demanding conditions, while the rated operating temperature up to 175 °C enhances its usability across various environments.
Seamless integration for synchronous applications
Meets JEDEC standards for industrial use
Advanced thermal management improves endurance
Exceptional on resistance for efficiency
Handles high avalanche energy reliably
Supports halogen free and eco conscious design
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