Infineon OptiMOS N-Channel MOSFET, 56 A, 150 V Enhancement, 8-Pin PG-WSON-8 BSC160N15NS5SCATMA1
- N° de stock RS:
- 284-651
- Référence fabricant:
- BSC160N15NS5SCATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
19,56 €
(TVA exclue)
23,67 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 18 octobre 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 3,912 € | 19,56 € |
| 50 - 95 | 3,716 € | 18,58 € |
| 100 - 495 | 3,442 € | 17,21 € |
| 500 - 995 | 3,166 € | 15,83 € |
| 1000 + | 3,048 € | 15,24 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 284-651
- Référence fabricant:
- BSC160N15NS5SCATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 56A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | OptiMOS | |
| Package Type | PG-WSON-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 16mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 115W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 56A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series OptiMOS | ||
Package Type PG-WSON-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 16mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 115W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon OptiMOS Power MOSFET is engineered to deliver exceptional performance in high frequency switching applications. With a robust 150V rating, it serves as a reliable solution for industrial and automotive electronics. The dual side cooled PG WSON 8 package ensures minimal thermal resistance, allowing for efficient heat dissipation even under heavy load conditions. Designed for N channel operation, this MOSFET excels in synchronous rectification, making it Ideal for power management tasks where efficiency and reliability are paramount. Manufacturers can Trust this component to meet stringent requirements, delivering effective and stable performance in demanding environments.
Optimised for high frequency operation
Dual side cooling lowers thermal resistance
Pb free lead plating for RoHS compliance
Excellent gate charge performance boosts efficiency
Ideal for synchronous rectification applications
Operates at high temperatures without efficiency loss
Qualified to JEDEC standards for industry
Liens connexes
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