Infineon OptiMOS N-Channel MOSFET, 171 A, 100 V Enhancement, 8-Pin PG-WSON-8 BSC023N08NS5SCATMA1
- N° de stock RS:
- 284-638
- Référence fabricant:
- BSC023N08NS5SCATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
3,94 €
(TVA exclue)
4,76 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 18 octobre 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 1,97 € | 3,94 € |
| 20 - 198 | 1,775 € | 3,55 € |
| 200 - 998 | 1,63 € | 3,26 € |
| 1000 - 1998 | 1,52 € | 3,04 € |
| 2000 + | 1,355 € | 2,71 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 284-638
- Référence fabricant:
- BSC023N08NS5SCATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 171A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | OptiMOS | |
| Package Type | PG-WSON-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 188W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 171A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series OptiMOS | ||
Package Type PG-WSON-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 188W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon OptiMOS Power MOSFET is engineered to excel in demanding applications requiring high efficiency and robust performance. Designed with an innovative PG WSON 8 package, this transistor delivers excellent thermal management, ensuring optimal heat dissipation during operation. Moreover, its dual side cooling capability significantly enhances thermal performance, and the extended operational temperature range allows for greater versatility in various environments. With a focus on reliability, this device has undergone rigorous testing to ensure it meets the stringent quality standards expected in industrial applications, making it a reliable choice for engineers looking to improve system performance while managing thermal constraints.
High efficiency minimizes energy loss
Dual side cooling enhances thermal management
Compact design for space saving integration
Meets high reliability standards
Suitable for various industrial applications
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