Infineon OptiMOS N-Channel MOSFET, 381 A, 40 V Enhancement, 8-Pin PG-WSON-8 BSC009N04LSSCATMA1

Sous-total (1 bobine de 4000 unités)*

4 360,00 €

(TVA exclue)

5 280,00 €

(TVA incluse)

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  • Expédition à partir du 18 octobre 2027
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Prix par unité
la bobine*
4000 +1,09 €4 360,00 €

*Prix donné à titre indicatif

N° de stock RS:
284-695
Référence fabricant:
BSC009N04LSSCATMA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

381A

Maximum Drain Source Voltage Vds

40V

Series

OptiMOS

Package Type

PG-WSON-8

Mount Type

Surface

Pin Count

8

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

188W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

Infineon OptiMOS Series MOSFET, 40V Maximum Drain Source Voltage, 381A Maximum Continuous Drain Current - BSC009N04LSSCATMA1


This MOSFET is a high-current N-channel switch designed for surface-mount power conversion and control applications. It operates across a wide ambient range and is intended for systems that demand substantial current handling and compact mounting using a PG-WSON-8 package.

Features and Benefits:


• 381A continuous drain current enables high-load switching capability
• 40V drain-source rating supports medium-voltage power stages
• 1V forward voltage reduces conduction losses under load
• 188W maximum dissipation permits substantial power handling
• Type N enhancement mode provides standard MOSFET switching behaviour
• 20V gate-source tolerance allows robust gate-drive margins

Applications


• Suitable for high-current DC-DC converter stages
• Ideal for motor-driver half-bridge configurations
• Used with server power-supply switching networks
• Can be used for telecom power distribution modules
• Appropriate for industrial inverter intermediate stages

What temperature extremes can the device endure in operation?


It maintains functionality from -55 °C up to 175 °C, allowing use in harsh thermal environments and elevated-junction designs.

What mounting method does the device require on a PCB?


The component is supplied in a PG-WSON-8 package intended for surface mounting to enable compact board layouts and low-inductance connections.

How does the gate-drive voltage affect switching?


The gate-source voltage range permits up to 20V, giving margin for fast switching with common gate-drive voltages while avoiding overdrive that could stress the gate.

Is the device suitable where environmentally restricted materials are required?


It complies with RoHS directives, meeting restricted-substance requirements for material selection.

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