Infineon OptiMOS N-Channel MOSFET, 89 A, 150 V Enhancement, 8-Pin PG-WSON-8 BSC093N15NS5SCATMA1
- N° de stock RS:
- 284-644
- Référence fabricant:
- BSC093N15NS5SCATMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 4000 unités)*
7 056,00 €
(TVA exclue)
8 536,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 18 octobre 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 4000 + | 1,764 € | 7 056,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 284-644
- Référence fabricant:
- BSC093N15NS5SCATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 89A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | OptiMOS | |
| Package Type | PG-WSON-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 9.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 167W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 89A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series OptiMOS | ||
Package Type PG-WSON-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 9.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 167W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon OptiMOS Power MOSFET is a high performance N channel MOSFET designed for demanding applications requiring optimal efficiency. With an operating voltage of up to 150 V and outstanding thermal performance. Engineered with dual side cooling technology, it provides exceptional thermal resistance, thereby ensuring reliable operation even under challenging conditions. The integration of innovative design elements reduces on resistance and enhances the overall efficiency of power management systems. Ideal for industrial applications, its robust construction guarantees longevity and reliable performance.
Dual side cooled package for thermal management
Excellent power efficiency for high frequency use
Wide operating temperature range for reliability
Low on resistance enhances energy efficiency
Fast switching speeds for Advanced power applications
Qualified to JEDEC standards for industry
Liens connexes
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