Infineon OptiMOS Type N-Channel MOSFET, 89 A, 150 V Enhancement, 8-Pin PG-WSON-8 BSC093N15NS5SCATMA1

Voir l’ensemble des MOSFETs
Actuellement indisponible
Désolés, nous ne savons pas quand ce produit sera réapprovisionné.
Options de conditionnement :
N° de stock RS:
284-645
Référence fabricant:
BSC093N15NS5SCATMA1
Fabricant:
Infineon
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

89A

Maximum Drain Source Voltage Vds

150V

Package Type

PG-WSON-8

Series

OptiMOS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

9.3mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

167W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Infineon OptiMOS Power MOSFET is a high performance N channel MOSFET designed for demanding applications requiring optimal efficiency. With an operating voltage of up to 150 V and outstanding thermal performance. Engineered with dual side cooling technology, it provides exceptional thermal resistance, thereby ensuring reliable operation even under challenging conditions. The integration of innovative design elements reduces on resistance and enhances the overall efficiency of power management systems. Ideal for industrial applications, its robust construction guarantees longevity and reliable performance.

Dual side cooled package for thermal management

Excellent power efficiency for high frequency use

Wide operating temperature range for reliability

Low on resistance enhances energy efficiency

Fast switching speeds for Advanced power applications

Qualified to JEDEC standards for industry

Liens connexes