onsemi Type N-Channel MOSFET, 30 A, 650 V Enhancement, 3-Pin TO-247

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Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
N° de stock RS:
186-1285
Référence fabricant:
NVHL110N65S3F
Fabricant:
onsemi
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Marque

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

110mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

240W

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

58nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

15.87mm

Width

4.82 mm

Height

20.82mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

Non conforme

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.

700 V @ TJ = 150°C

Ultra Low Gate Charge (Typ. Qg = 58 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 553 pF)

PPAP Capable

Typ. RDS(on) = 93 mΩ

Higher system reliability at low temperature operation

Lower switching loss

PPAP Capable

Applications

HV DC/DC converter

End Products

On Board Charger

DC/DC Converter

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