Infineon IGBT, 20 A 650 V, 3-Pin PG-TO-247, Through Hole
- N° de stock RS:
- 273-7441
- Référence fabricant:
- IHW20N65R5XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
2,87 €
(TVA exclue)
3,472 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 140 unité(s) expédiée(s) à partir du 16 mars 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 8 | 1,435 € | 2,87 € |
| 10 - 98 | 1,30 € | 2,60 € |
| 100 - 248 | 1,195 € | 2,39 € |
| 250 + | 1,105 € | 2,21 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 273-7441
- Référence fabricant:
- IHW20N65R5XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Maximum Continuous Collector Current Ic | 20A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 150W | |
| Package Type | PG-TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.35V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 16.13 mm | |
| Standards/Approvals | JESD-022, RoHS | |
| Height | 5.21mm | |
| Length | 21.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Maximum Continuous Collector Current Ic 20A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 150W | ||
Package Type PG-TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.35V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Width 16.13 mm | ||
Standards/Approvals JESD-022, RoHS | ||
Height 5.21mm | ||
Length 21.1mm | ||
Automotive Standard No | ||
The Infineon IGBT is a reverse conducting IGBT with monolithic body diode. This IGBT has powerful monolithic reverse conducting diode with low forward voltage and qualified according to JESD022 for target applications. It has easy parallel switching capability due to positive temperature coefficient in VCEsat. This IGBT is recommended for induction cooking, inverter zed microwave ovens and resonant converters.
Low EMI
Halogen free
RoHS compliant
High ruggedness
Pb free lead plating
Stable temperature behaviour
Very low VCEsat and low Eoff
Very tight parameter distribution
Liens connexes
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- Infineon IKWH50N65EH7XKSA1 3-Pin PG-TO-247-3-STD-NN4.8, Through Hole
- Infineon IKQ150N65EH7XKSA1 160 A 650 V Through Hole
- Infineon IKY120N65EH7XKSA1 160 A 650 V Through Hole
