Infineon IKZA75N65EH7XKSA1, Type N-Channel IGBT 650 V, 4-Pin PG-TO-247-4-STD-NT3.7, Through Hole

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Actuellement indisponible
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N° de stock RS:
284-629
Référence fabricant:
IKZA75N65EH7XKSA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

338W

Package Type

PG-TO-247-4-STD-NT3.7

Mount Type

Through Hole

Channel Type

Type N

Pin Count

4

Maximum Gate Emitter Voltage VGEO

±20 V

Minimum Operating Temperature

40°C

Maximum Operating Temperature

175°C

Length

21.1mm

Standards/Approvals

No

Width

15.9 mm

Height

5.1mm

Automotive Standard

No

The Infineon IGBT is a high performance power component designed to meet the rigorous demands of contemporary power applications. It features the Advanced TRENCHSTOP IGBT7 technology, providing a remarkable balance of high speed operation and low saturation voltage. This innovative device ensures efficient energy management and enhanced thermal performance, making it Ideal for industrial applications such as uninterruptible power supplies, electric vehicle charging systems, and string inverters. With robust reliability and comprehensive product validation, it stands as a reliable choice for engineers focused on optimising performance in challenging electronic environments.

High speed operation minimizes switching losses

Low collector emitter saturation enhances power efficiency

Humidity resistant design ensures reliability

Robust thermal management supports high current

Optimized for hard switching multi level applications

Comprehensive PSpice models for easy integration

Soft and fast recovery diode enables smooth performance

Qualified for industrial use per JEDEC standards

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