Infineon IHW20N65R5XKSA1 IGBT, 20 A 650 V, 3-Pin PG-TO-247, Through Hole
- N° de stock RS:
- 273-7440
- Référence fabricant:
- IHW20N65R5XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 tube de 30 unités)*
29,58 €
(TVA exclue)
35,79 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- 120 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 30 - 90 | 0,986 € | 29,58 € |
| 120 + | 0,904 € | 27,12 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 273-7440
- Référence fabricant:
- IHW20N65R5XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 20A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 150W | |
| Package Type | PG-TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.35V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.21mm | |
| Length | 21.1mm | |
| Standards/Approvals | JESD-022, RoHS | |
| Width | 16.13 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 20A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 150W | ||
Package Type PG-TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.35V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Height 5.21mm | ||
Length 21.1mm | ||
Standards/Approvals JESD-022, RoHS | ||
Width 16.13 mm | ||
Automotive Standard No | ||
The Infineon IGBT is a reverse conducting IGBT with monolithic body diode. This IGBT has powerful monolithic reverse conducting diode with low forward voltage and qualified according to JESD022 for target applications. It has easy parallel switching capability due to positive temperature coefficient in VCEsat. This IGBT is recommended for induction cooking, inverter zed microwave ovens and resonant converters.
Low EMI
Halogen free
RoHS compliant
High ruggedness
Pb free lead plating
Stable temperature behaviour
Very low VCEsat and low Eoff
Very tight parameter distribution
Liens connexes
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- Infineon IKWH50N65EH7XKSA1 3-Pin PG-TO-247-3-STD-NN4.8, Through Hole
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