Infineon IKQ150N65EH7XKSA1, Type N-Channel IGBT, 160 A 650 V, 3-Pin PG-TO-247-3-PLUS-N, Through Hole

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Actuellement indisponible
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N° de stock RS:
284-990
Référence fabricant:
IKQ150N65EH7XKSA1
Fabricant:
Infineon
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Marque

Infineon

Maximum Continuous Collector Current Ic

160A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

621W

Package Type

PG-TO-247-3-PLUS-N

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Operating Temperature

175°C

Width

15.9 mm

Height

5.1mm

Standards/Approvals

IEC 60747, IEC 60749, IEC 60068

Length

20.1mm

Automotive Standard

No

The Infineon IGBT exemplifies cutting edge performance with its high speed and low saturation voltage design, tailored for demanding applications across various sectors. This product leverages the Advanced trench stop IGBT7 technology, achieving remarkable efficiency at 650 V. Its copacked structure with a soft, fast recovery Emitter Controlled 7 diode ensures exceptional reliability and integrated circuit performance. Ideal for industrial UPS systems and electric vehicle charging stations Designed with humidity robustness in mind, the product offers enhanced durability in challenging environments.

Provides low switching losses for efficiency

Delivers low collector emitter saturation voltage

Optimized for hard switching applications

Ensures humidity robustness for reliability

Offers a range of products and PSpice models

Qualified for industrial applications and rigorous standards

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