Infineon IKY120N65EH7XKSA1, Type N-Channel IGBT, 160 A 650 V, 4-Pin PG-TO-247-4-PLUS-NN5.1, Through Hole
- N° de stock RS:
- 285-017
- Référence fabricant:
- IKY120N65EH7XKSA1
- Fabricant:
- Infineon
Sous-total (1 tube de 30 unités)*
158,04 €
(TVA exclue)
191,22 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 07 septembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 30 + | 5,268 € | 158,04 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 285-017
- Référence fabricant:
- IKY120N65EH7XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 160A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 498W | |
| Package Type | PG-TO-247-4-PLUS-NN5.1 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 4 | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | 40°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 20.1mm | |
| Height | 5.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 160A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 498W | ||
Package Type PG-TO-247-4-PLUS-NN5.1 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 4 | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature 40°C | ||
Maximum Operating Temperature 175°C | ||
Length 20.1mm | ||
Height 5.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Pays d'origine :
- DE
The Infineon IGBT exemplifies cutting edge technology with its 650 V trench stop IGBT7 features, designed for high efficiency and minimal switching losses. This device is engineered for robust performance in a variety of applications, including industrial UPS systems and electric vehicle charging. Its unique construction ensures low collector emitter saturation voltage, facilitating smooth switching behaviour while maintaining reliability under demanding conditions.
High speed operation enhances system responsiveness
Low switching losses improve energy efficiency
Humidity robustness ensures reliable performance
Optimized for hard switching applications for versatility
Comprehensive product spectrum fits diverse needs
Soft recovery diode minimizes electrical stress
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