Infineon IKWH40N65EH7XKSA1, Type N-Channel IGBT 650 V, 3-Pin PG-TO-247-3-STD-NN4.8, Through Hole

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Actuellement indisponible
Désolés, nous ne savons pas quand ce produit sera réapprovisionné.
N° de stock RS:
285-008
Référence fabricant:
IKWH40N65EH7XKSA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

208W

Package Type

PG-TO-247-3-STD-NN4.8

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±20 V

Minimum Operating Temperature

40°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

5.1mm

Length

20.1mm

Width

15.9 mm

Automotive Standard

No

The Infineon IGBT is a cutting edge IGBT module, utilising TRENCHSTOP IGBT7 technology for exceptional performance in high speed applications with low saturation voltage. Designed with a collector emitter voltage rating of 650 V, this module ensures enhanced efficiency and minimal energy loss, making it Ideal for demanding industrial environments. With its robust package and optimised thermal properties, this module offers outstanding robustness against humidity, ensuring consistent operation across various conditions.

High speed operation for efficient energy management

Low collector emitter saturation voltage boosts performance

Soft recovery diode ensures gentle switching

Humidity resistant design for reliability in diverse conditions

Optimized for two and three level topologies

Comprehensive product spectrum for tailored solutions

Qualified for industrial applications per rigorous JEDEC standards

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