Infineon IKQ120N65EH7XKSA1, Type N-Channel IGBT 650 V, 3-Pin PG-TO-247-3-PLUS-N, Through Hole
- N° de stock RS:
- 284-988
- Référence fabricant:
- IKQ120N65EH7XKSA1
- Fabricant:
- Infineon
Sous-total (1 tube de 30 unités)*
141,84 €
(TVA exclue)
171,63 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 04 septembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 30 + | 4,728 € | 141,84 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 284-988
- Référence fabricant:
- IKQ120N65EH7XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 498W | |
| Package Type | PG-TO-247-3-PLUS-N | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 20.1mm | |
| Height | 5.1mm | |
| Standards/Approvals | IEC 60068, IEC 60749, IEC 60747 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 498W | ||
Package Type PG-TO-247-3-PLUS-N | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Length 20.1mm | ||
Height 5.1mm | ||
Standards/Approvals IEC 60068, IEC 60749, IEC 60747 | ||
Automotive Standard No | ||
- Pays d'origine :
- DE
The Infineon IGBT with Advanced power semiconductor revolutionises efficiency in various applications with its high speed capabilities and low saturation voltage. Designed with the renowned 650 V TRENCHSTOP IGBT7 technology, it excels in hard switching topologies, making it Ideal for industrial UPS systems, EV charging solutions, and string inverters. This robust component is qualified under stringent industrial standards, ensuring reliability and longevity in demanding environments.
Utilizes trench technology for efficiency
Minimizes switching losses for performance
Engineered for reliability in high humidity
Smooth switching characteristics for precision
Designed for versatile power electronics use
Qualified for industrial applications per JEDEC
Supports device lifespan with thermal management
Provides simulation capabilities with PSpice models
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