Infineon IKQ120N65EH7XKSA1, Type N-Channel IGBT 650 V, 3-Pin PG-TO-247-3-PLUS-N, Through Hole

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Actuellement indisponible
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N° de stock RS:
284-988
Référence fabricant:
IKQ120N65EH7XKSA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

498W

Package Type

PG-TO-247-3-PLUS-N

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Collector Emitter Saturation Voltage VceSAT

1.65V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Width

15.9 mm

Height

5.1mm

Standards/Approvals

IEC 60068, IEC 60749, IEC 60747

Length

20.1mm

Automotive Standard

No

The Infineon IGBT with Advanced power semiconductor revolutionises efficiency in various applications with its high speed capabilities and low saturation voltage. Designed with the renowned 650 V TRENCHSTOP IGBT7 technology, it excels in hard switching topologies, making it Ideal for industrial UPS systems, EV charging solutions, and string inverters. This robust component is qualified under stringent industrial standards, ensuring reliability and longevity in demanding environments.

Utilizes trench technology for efficiency

Minimizes switching losses for performance

Engineered for reliability in high humidity

Smooth switching characteristics for precision

Designed for versatile power electronics use

Qualified for industrial applications per JEDEC

Supports device lifespan with thermal management

Provides simulation capabilities with PSpice models

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