Infineon IKQ120N65EH7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 160 A 650 V, 3-Pin PG-TO247-3-PLUS-N,

Voir l’ensemble des IGBTs

Sous-total (1 tube de 30 unités)*

246,18 €

(TVA exclue)

297,87 €

(TVA incluse)

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Unité
Prix par unité
le tube*
30 +8,206 €246,18 €

*Prix donné à titre indicatif

N° de stock RS:
284-988
Référence fabricant:
IKQ120N65EH7XKSA1
Fabricant:
Infineon
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Marque

Infineon

Maximum Continuous Collector Current

160 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

498 W

Number of Transistors

1

Configuration

Single Collector, Single Emitter, Single Gate

Package Type

PG-TO247-3-PLUS-N

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

The Infineon IGBT with advanced power semiconductor revolutionises efficiency in various applications with its high speed capabilities and low saturation voltage. Designed with the renowned 650 V TRENCHSTOP IGBT7 technology, it excels in hard switching topologies, making it ideal for industrial UPS systems, EV charging solutions, and string inverters. This robust component is qualified under stringent industrial standards, ensuring reliability and longevity in demanding environments.

Utilizes trench technology for efficiency
Minimizes switching losses for performance
Engineered for reliability in high humidity
Smooth switching characteristics for precision
Designed for versatile power electronics use
Qualified for industrial applications per JEDEC
Supports device lifespan with thermal management
Provides simulation capabilities with PSpice models

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