Infineon F3L150R07W2H3B11BPSA1 IGBT Module 650 V, Through Hole
- N° de stock RS:
- 248-1202
- Référence fabricant:
- F3L150R07W2H3B11BPSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
59,02 €
(TVA exclue)
71,41 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 11 unité(s) expédiée(s) à partir du 13 avril 2026
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Unité | Prix par unité |
|---|---|
| 1 - 1 | 59,02 € |
| 2 - 4 | 56,06 € |
| 5 - 9 | 53,70 € |
| 10 - 19 | 51,35 € |
| 20 + | 48,98 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 248-1202
- Référence fabricant:
- F3L150R07W2H3B11BPSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
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Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Number of Transistors | 4 | |
| Maximum Power Dissipation Pd | 20mW | |
| Mount Type | Through Hole | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Maximum Operating Temperature | 150°C | |
| Series | F3L150R07W2H3B11 | |
| Height | 12mm | |
| Standards/Approvals | RoHS | |
| Length | 56.7mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Number of Transistors 4 | ||
Maximum Power Dissipation Pd 20mW | ||
Mount Type Through Hole | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Maximum Operating Temperature 150°C | ||
Series F3L150R07W2H3B11 | ||
Height 12mm | ||
Standards/Approvals RoHS | ||
Length 56.7mm | ||
Automotive Standard No | ||
The Infineon makes this EasyPACK 2B 650 V, 100 A 3-level IGBT module with Trench/Fieldstop IGBT H3 and rapid diode and PressFIT / NTC. This device offers easy of use compact design, optimized performance. The device provides added benefits like increased blocking voltage capability up to 650 V, low inductive design, low switching losses and low VCE,sat. It uses an Al2O3 substrate with low thermal resistance and PressFIT contact technology. This device offers rugged mounting due to integrated mounting clamp. This device uses IGBT HighSpeed 3 technology.
Best cost-performance ratio with reduced system costs
High degree of freedom in design
Highest efficiency and power density
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