Infineon F3L100R07W2H3B11BPSA1 IGBT Module 650 V, Through Hole
- N° de stock RS:
- 248-1200
- Référence fabricant:
- F3L100R07W2H3B11BPSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
46,64 €
(TVA exclue)
56,43 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 07 septembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 1 | 46,64 € |
| 2 - 4 | 44,32 € |
| 5 - 9 | 42,44 € |
| 10 - 19 | 40,58 € |
| 20 + | 38,71 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 248-1200
- Référence fabricant:
- F3L100R07W2H3B11BPSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 20mW | |
| Number of Transistors | 4 | |
| Mount Type | Through Hole | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 56.7mm | |
| Standards/Approvals | RoHS | |
| Height | 12mm | |
| Series | F3L100R07W2H3B11 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 20mW | ||
Number of Transistors 4 | ||
Mount Type Through Hole | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 56.7mm | ||
Standards/Approvals RoHS | ||
Height 12mm | ||
Series F3L100R07W2H3B11 | ||
Automotive Standard No | ||
The Infineon makes this EasyPACK 2B 650 V, 100 A 3-level IGBT module with Trench/Fieldstop IGBT H3 and rapid diode and PressFIT / NTC. This device offers easy of use compact design, optimized performance. The device provides added benefits like increased blocking voltage capability up to 650 V, low inductive design, low switching losses and low VCE,sat. It uses an Al2O3 substrate with low thermal resistance and PressFIT contact technology. This device offers rugged mounting due to integrated mounting clamp.
Best cost-performance ratio with reduced system costs
High degree of freedom in design, and uses IGBT HighSpeed 3 technology
Highest efficiency and power density
Liens connexes
- Infineon IGBT Module 650 V, Through Hole
- Infineon F3L150R07W2H3B11BPSA1 IGBT Module 650 V, Through Hole
- Infineon DF200R07W2H3B77BPSA1 IGBT Module 650 V, Through Hole
- Infineon DF300R07W2H3B77BPSA1 IGBT Module 650 V, Through Hole
- Infineon IGBT Module Panel
- Infineon F3L100R07W2E3B11BOMA1 IGBT Module Panel
- Infineon IGBT Through Hole
- Infineon IGP40N65F5XKSA1 IGBT Through Hole