Infineon F3L100R07W2H3B11BPSA1 IGBT Module 650 V, Through Hole
- N° de stock RS:
- 248-1200
- Référence fabricant:
- F3L100R07W2H3B11BPSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
46,64 €
(TVA exclue)
56,43 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 1 unité(s) expédiée(s) à partir du 16 mars 2026
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Unité | Prix par unité |
|---|---|
| 1 - 1 | 46,64 € |
| 2 - 4 | 44,32 € |
| 5 - 9 | 42,44 € |
| 10 - 19 | 40,58 € |
| 20 + | 38,71 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 248-1200
- Référence fabricant:
- F3L100R07W2H3B11BPSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 20mW | |
| Number of Transistors | 4 | |
| Mount Type | Through Hole | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Series | F3L100R07W2H3B11 | |
| Standards/Approvals | RoHS | |
| Width | 42.5 mm | |
| Length | 56.7mm | |
| Height | 12mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 20mW | ||
Number of Transistors 4 | ||
Mount Type Through Hole | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Series F3L100R07W2H3B11 | ||
Standards/Approvals RoHS | ||
Width 42.5 mm | ||
Length 56.7mm | ||
Height 12mm | ||
Automotive Standard No | ||
The Infineon makes this EasyPACK 2B 650 V, 100 A 3-level IGBT module with Trench/Fieldstop IGBT H3 and rapid diode and PressFIT / NTC. This device offers easy of use compact design, optimized performance. The device provides added benefits like increased blocking voltage capability up to 650 V, low inductive design, low switching losses and low VCE,sat. It uses an Al2O3 substrate with low thermal resistance and PressFIT contact technology. This device offers rugged mounting due to integrated mounting clamp.
Best cost-performance ratio with reduced system costs
High degree of freedom in design, and uses IGBT HighSpeed 3 technology
Highest efficiency and power density
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