Infineon DF300R07W2H3B77BPSA1 IGBT Module 650 V, Through Hole
- N° de stock RS:
- 248-1198
- Référence fabricant:
- DF300R07W2H3B77BPSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
55,63 €
(TVA exclue)
67,31 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 7 unité(s) expédiée(s) à partir du 23 mars 2026
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Unité | Prix par unité |
|---|---|
| 1 - 1 | 55,63 € |
| 2 - 4 | 52,85 € |
| 5 - 9 | 50,63 € |
| 10 - 19 | 48,40 € |
| 20 + | 46,18 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 248-1198
- Référence fabricant:
- DF300R07W2H3B77BPSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 20mW | |
| Number of Transistors | 4 | |
| Mount Type | Through Hole | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 42.5 mm | |
| Height | 12mm | |
| Length | 56.7mm | |
| Series | DF300R07W2H3_B77 | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 20mW | ||
Number of Transistors 4 | ||
Mount Type Through Hole | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 150°C | ||
Width 42.5 mm | ||
Height 12mm | ||
Length 56.7mm | ||
Series DF300R07W2H3_B77 | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon makes this EasyPACK 2B 650 V, 100 A 3-level IGBT module with Trench/Fieldstop IGBT H3 and rapid diode and PressFIT / NTC. This device offers easy of use compact design, optimized performance. The device provides added benefits like increased blocking voltage capability up to 650 V, low inductive design, low switching losses and low VCE,sat. It uses an Al2O3 substrate with low thermal resistance and PressFIT contact technology. This device offers rugged mounting due to integrated mounting clamp. This device has Booster configuration and uses IGBT HighSpeed 3 technology.
Best cost-performance ratio with reduced system costs
High degree of freedom in design
Highest efficiency and power density
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