Infineon IGBT Module 650 V, Through Hole

Voir l’ensemble des IGBTs
Offre groupée disponible

Sous-total (1 plateau de 15 unités)*

540,54 €

(TVA exclue)

654,06 €

(TVA incluse)

Add to Basket
sélectionner ou taper la quantité
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard

Unité
Prix par unité
le plateau*
15 - 1536,036 €540,54 €
30 +34,235 €513,53 €

*Prix donné à titre indicatif

N° de stock RS:
248-1199
Référence fabricant:
F3L100R07W2H3B11BPSA1
Fabricant:
Infineon
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

Infineon

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

650V

Number of Transistors

4

Maximum Power Dissipation Pd

20mW

Mount Type

Through Hole

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Height

12mm

Standards/Approvals

RoHS

Length

56.7mm

Series

F3L100R07W2H3B11

Automotive Standard

No

The Infineon makes this EasyPACK 2B 650 V, 100 A 3-level IGBT module with Trench/Fieldstop IGBT H3 and rapid diode and PressFIT / NTC. This device offers easy of use compact design, optimized performance. The device provides added benefits like increased blocking voltage capability up to 650 V, low inductive design, low switching losses and low VCE,sat. It uses an Al2O3 substrate with low thermal resistance and PressFIT contact technology. This device offers rugged mounting due to integrated mounting clamp.

Best cost-performance ratio with reduced system costs

High degree of freedom in design, and uses IGBT HighSpeed 3 technology

Highest efficiency and power density

Liens connexes