Infineon FP25R12W2T4B11BOMA1 IGBT Module 1200 V

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47,65 €

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57,66 €

(TVA incluse)

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1 - 147,65 €
2 - 446,70 €
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N° de stock RS:
244-5391
Référence fabricant:
FP25R12W2T4B11BOMA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

175W

Number of Transistors

7

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.25V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Width

42.5mm

Series

FP25R12W2T4B11B

Length

51mm

Height

12mm

Automotive Standard

No

Infineon FP25R12W2T4B11B Series IGBT Module, 175W Maximum Power Dissipation, 1200V Max Collector Emitter Voltage - FP25R12W2T4B11BOMA1


This IGBT module is a high-voltage power switching device designed for demanding industrial applications. It combines multiple transistors in a single package to manage high collector-emitter voltages and significant power dissipation while operating across a wide temperature range.

Features and Benefits:


• Handles 1200V collector-emitter voltage for high-voltage systems
• Manages 175W maximum power dissipation for sustained loads
• Operates to 150°C for high-temperature duty cycles
• Seven transistors in one module to simplify circuit design
• Low saturation voltage 2.25V to reduce conduction losses
• Gate-emitter rating 20V to accommodate common drive levels

Applications


• Suitable for industrial motor drives requiring high-voltage switching
• Ideal for power converters in renewable energy systems
• Used with inverter stages in large HVAC installations
• Can be used for traction auxiliary power systems
• Appropriate for high-temperature environments in heavy industry

What ambient range can it withstand?


It is specified to function down to −40°C and up to 150°C.

How does the gate-emitter limit affect driver selection?


Gate drivers must not exceed the 20V gate-emitter rating to avoid overstress.

What electrical characteristic reduces energy loss during conduction?


The module’s collector-emitter saturation voltage of 2.25V limits conduction losses.

How many switching elements are integrated in the package?


The module contains seven discrete transistors within a single enclosure.

Is the product suitable for environmentally restricted manufacturing?


It meets RoHS requirements and is therefore compliant with lead-free process constraints.

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