Infineon FP10R12W1T4BOMA1 IGBT Module 1200 V
- N° de stock RS:
- 244-5384
- Référence fabricant:
- FP10R12W1T4BOMA1
- Fabricant:
- Infineon
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34,27 €
(TVA exclue)
41,47 €
(TVA incluse)
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Unité | Prix par unité |
|---|---|
| 1 - 1 | 34,27 € |
| 2 - 4 | 32,54 € |
| 5 - 9 | 29,32 € |
| 10 + | 29,14 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 244-5384
- Référence fabricant:
- FP10R12W1T4BOMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 7 | |
| Maximum Power Dissipation Pd | 105W | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.25V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 62.8mm | |
| Series | FP10R12W1T4B | |
| Width | 33.8mm | |
| Height | 12mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 7 | ||
Maximum Power Dissipation Pd 105W | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.25V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 62.8mm | ||
Series FP10R12W1T4B | ||
Width 33.8mm | ||
Height 12mm | ||
Automotive Standard No | ||
Infineon FP10R12W1T4B Series IGBT Module, 1200V Maximum Collector-Emitter Voltage, 105W Maximum Power Dissipation - FP10R12W1T4BOMA1
This IGBT module is a high-voltage semiconductor assembly designed to switch and control power in industrial electronics. It provides rugged operation across a wide thermal range and is suitable for systems requiring substantial voltage blocking and moderate power dissipation. The device is intended for applications demanding reliable switching at elevated temperatures while conforming to RoHS material restrictions.
Features and Benefits:
• 1200 V blocking capability enables high-voltage switching applications
• 105 W power dissipation allows sustained thermal loading
• 7-transistor configuration increases switching density per package
• 20 V gate-emitter rating supports robust gate-drive margins
• VCE(sat) 2.25 V typical reduces conduction losses during on-state
• Operates to 150 °C for high-temperature environments
• 105 W power dissipation allows sustained thermal loading
• 7-transistor configuration increases switching density per package
• 20 V gate-emitter rating supports robust gate-drive margins
• VCE(sat) 2.25 V typical reduces conduction losses during on-state
• Operates to 150 °C for high-temperature environments
Applications
• Suitable for industrial motor inverter stages
• Ideal for medium-power renewable energy converters
• Used with power supplies requiring high-voltage switching
• Can be used for traction auxiliary converters
• Appropriate for induction heating power stages
• Ideal for medium-power renewable energy converters
• Used with power supplies requiring high-voltage switching
• Can be used for traction auxiliary converters
• Appropriate for induction heating power stages
What temperature range can it reliably operate within?
It functions across a minimum of −40 °C up to a maximum of 150 °C.
What is the maximum collector-emitter voltage capability?
The device supports up to 1200 V between collector and emitter.
How much power can the module dissipate under load?
It can dissipate a maximum of 105 W of power.
What gate drive voltage limit must be observed?
The gate-emitter voltage must not exceed 20 V.
Is the module compliant with common environmental standards?
It meets RoHS requirements for restricted substances.
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