Infineon FP25R12W2T4B11BOMA1 IGBT Module 1200 V
- N° de stock RS:
- 244-5389
- Référence fabricant:
- FP25R12W2T4B11BOMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 plateau de 15 unités)*
506,63 €
(TVA exclue)
613,02 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 22 février 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le plateau* |
|---|---|---|
| 15 - 15 | 33,775 € | 506,63 € |
| 30 + | 32,085 € | 481,28 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 244-5389
- Référence fabricant:
- FP25R12W2T4B11BOMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 7 | |
| Maximum Power Dissipation Pd | 175W | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.25V | |
| Maximum Operating Temperature | 150°C | |
| Series | FP25R12W2T4B11B | |
| Width | 42.5mm | |
| Standards/Approvals | RoHS | |
| Length | 51mm | |
| Height | 12mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 7 | ||
Maximum Power Dissipation Pd 175W | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.25V | ||
Maximum Operating Temperature 150°C | ||
Series FP25R12W2T4B11B | ||
Width 42.5mm | ||
Standards/Approvals RoHS | ||
Length 51mm | ||
Height 12mm | ||
Automotive Standard No | ||
Infineon FP25R12W2T4B11B Series IGBT Module, 175W Maximum Power Dissipation, 1200V Max Collector Emitter Voltage - FP25R12W2T4B11BOMA1
This IGBT module is a high-voltage power switching device designed for demanding industrial applications. It combines multiple transistors in a single package to manage high collector-emitter voltages and significant power dissipation while operating across a wide temperature range.
Features and Benefits:
• Handles 1200V collector-emitter voltage for high-voltage systems
• Manages 175W maximum power dissipation for sustained loads
• Operates to 150°C for high-temperature duty cycles
• Seven transistors in one module to simplify circuit design
• Low saturation voltage 2.25V to reduce conduction losses
• Gate-emitter rating 20V to accommodate common drive levels
• Manages 175W maximum power dissipation for sustained loads
• Operates to 150°C for high-temperature duty cycles
• Seven transistors in one module to simplify circuit design
• Low saturation voltage 2.25V to reduce conduction losses
• Gate-emitter rating 20V to accommodate common drive levels
Applications
• Suitable for industrial motor drives requiring high-voltage switching
• Ideal for power converters in renewable energy systems
• Used with inverter stages in large HVAC installations
• Can be used for traction auxiliary power systems
• Appropriate for high-temperature environments in heavy industry
• Ideal for power converters in renewable energy systems
• Used with inverter stages in large HVAC installations
• Can be used for traction auxiliary power systems
• Appropriate for high-temperature environments in heavy industry
What ambient range can it withstand?
It is specified to function down to −40°C and up to 150°C.
How does the gate-emitter limit affect driver selection?
Gate drivers must not exceed the 20V gate-emitter rating to avoid overstress.
What electrical characteristic reduces energy loss during conduction?
The module’s collector-emitter saturation voltage of 2.25V limits conduction losses.
How many switching elements are integrated in the package?
The module contains seven discrete transistors within a single enclosure.
Is the product suitable for environmentally restricted manufacturing?
It meets RoHS requirements and is therefore compliant with lead-free process constraints.
Liens connexes
- Infineon FP25R12W2T4B11BOMA1 IGBT Module 1200 V
- Infineon IGBT Module 1200 V
- Infineon FP75R12KT4B11BOSA1 IGBT Module 1200 V
- Infineon FP100R12KT4BOSA1 IGBT Module 1200 V
- Infineon FP15R12W1T4BOMA1 IGBT Module 1200 V
- Infineon FP100R12KT4B11BOSA1 IGBT Module 1200 V
- Infineon FP25R12W2T4BOMA1 IGBT Module 1200 V
- Infineon F475R06W1E3BOMA1 IGBT Module 1200 V