Infineon FP15R12W1T4BOMA1 IGBT Module 1200 V
- N° de stock RS:
- 244-5387
- Référence fabricant:
- FP15R12W1T4BOMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
37,45 €
(TVA exclue)
45,31 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 19 février 2027
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Unité | Prix par unité |
|---|---|
| 1 - 1 | 37,45 € |
| 2 - 4 | 35,59 € |
| 5 - 9 | 32,04 € |
| 10 + | 31,84 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 244-5387
- Référence fabricant:
- FP15R12W1T4BOMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 130W | |
| Number of Transistors | 7 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.25V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 33.8mm | |
| Series | FP15R12W1T4B | |
| Length | 62.8mm | |
| Height | 12mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 130W | ||
Number of Transistors 7 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.25V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 33.8mm | ||
Series FP15R12W1T4B | ||
Length 62.8mm | ||
Height 12mm | ||
Automotive Standard No | ||
Infineon FP15R12W1T4B Series IGBT Module, 1200V Collector-Emitter Voltage, 130W Power Dissipation - FP15R12W1T4BOMA1
This IGBT module is a power semiconductor assembly designed to switch and control high-voltage DC loads in industrial power electronics. It delivers controlled switching capability for demanding thermal and electrical environments, operating across a wide temperature span and conforming to RoHS requirements.
Features and Benefits:
• Vceo rating of 1200 V affords high-voltage switching capability
• Power dissipation up to 130 W enables sustained thermal load handling
• Gate-emitter withstand up to 20 V supports robust gate‑drive margins
• Collector-emitter saturation of 2.25 V reduces conduction losses
• Seven transistors provide multi-device switching within one package
• Power dissipation up to 130 W enables sustained thermal load handling
• Gate-emitter withstand up to 20 V supports robust gate‑drive margins
• Collector-emitter saturation of 2.25 V reduces conduction losses
• Seven transistors provide multi-device switching within one package
Applications
• Suitable for industrial motor-drive inverter stages
• Used with high-voltage DC-DC conversion systems
• Ideal for power-factor correction and soft-switching stages
• Can be used for switched-mode power supplies in utilities
• Used for medium-frequency traction and industrial converters
• Used with high-voltage DC-DC conversion systems
• Ideal for power-factor correction and soft-switching stages
• Can be used for switched-mode power supplies in utilities
• Used for medium-frequency traction and industrial converters
What ambient temperatures can it reliably operate within?
It maintains operation from −40 °C up to 150 °C.
How does the module address hazardous-substance restrictions?
It is manufactured to meet RoHS compliance for restricted materials.
What are the external mounting space considerations?
The package measures 33.8 x 62.8 x 12 mm for footprint and height planning.
How many semiconductor switches are integrated in the package?
The construction includes seven individual transistors.
What conduction performance can be expected under load?
Expect a maximum collector-emitter saturation voltage of 2.25 V during conduction.
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