Infineon, Type N-Channel IGBT Single Transistor IC, 30 A 650 V, 3-Pin TO-263, Surface
- N° de stock RS:
- 215-6647
- Référence fabricant:
- IKB15N65EH5ATMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 1000 unités)*
932,00 €
(TVA exclue)
1 128,00 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | la bobine* |
|---|---|---|
| 1000 + | 0,932 € | 932,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 215-6647
- Référence fabricant:
- IKB15N65EH5ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Maximum Continuous Collector Current Ic | 30A | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 105W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Series | High Speed Fifth Generation | |
| Standards/Approvals | JEDEC47/20/22 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Maximum Continuous Collector Current Ic 30A | ||
Product Type IGBT Single Transistor IC | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 105W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Series High Speed Fifth Generation | ||
Standards/Approvals JEDEC47/20/22 | ||
Automotive Standard No | ||
The Infineon high speed switching insulated-gate bipolar transistor copacked with full rated current rapid 1 antiparallel diode also has 650v breakdown voltage.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
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