STMicroelectronics STGWA30IH160DF2, N-Channel IGBT, 85 A 1.6 kV, 3-Pin TO-247, Through Hole
- N° de stock RS:
- 468-506
- Référence fabricant:
- STGWA30IH160DF2
- Fabricant:
- STMicroelectronics
Sous-total (1 tube de 30 unités)*
62,13 €
(TVA exclue)
75,18 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 03 mai 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 30 + | 2,071 € | 62,13 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 468-506
- Référence fabricant:
- STGWA30IH160DF2
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 85A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1.6kV | |
| Maximum Power Dissipation Pd | 395W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 331ns | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.2V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Series | IH2 | |
| Width | 15.9mm | |
| Standards/Approvals | No | |
| Length | 20.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Maximum Continuous Collector Current Ic 85A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1.6kV | ||
Maximum Power Dissipation Pd 395W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 331ns | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.2V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 175°C | ||
Series IH2 | ||
Width 15.9mm | ||
Standards/Approvals No | ||
Length 20.1mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The STMicroelectronics IGBT has been developed using an Advanced proprietary trench gate field-stop structure, whose performance is optimized both in conduction and switching losses for soft commutation. A freewheeling diode with a low drop forward voltage is included. The result is a product specifically designed to maximize efficiency for any resonant and soft-switching applications.
Minimized tail current
Tight parameter distribution
Low thermal resistance
Liens connexes
- STMicroelectronics STGWA30IH160DF2 85 A 1600 V Through Hole
- Infineon 30 A 1600 V Through Hole
- Infineon IHW30N160R5XKSA1 30 A 1600 V Through Hole
- STMicroelectronics GWA40MS120DF4AG 3-Pin TO-247
- STMicroelectronics STGW80H65DFB 3-Pin TO-247, Through Hole
- Infineon 85 A 650 V Through Hole
- Infineon 85 A 650 V Through Hole
- STMicroelectronics 120 A 600 V Through Hole