Références fabricant

Infineon IHW30N160R5XKSA1, N-Channel IGBT, 30 A 1.6 kV, 3-Pin TO-247, Through Hole

N° de stock RS:: 218-4398
Référence fabricant:: IHW30N160R5XKSA1
Fabricant:: Infineon

Infineon IHW30N160R5XKSA1, N-Channel IGBT, 30 A 1.6 kV, 3-Pin TO-247, Through Hole

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Sous-total (1 tube de 30 unités)*

82,80 €

(TVA exclue)

100,20 €

(TVA incluse)

Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard

Unité	Prix par unité	le tube*
30 - 30	2,76 €	82,80 €
60 - 120	2,622 €	78,66 €
150 +	2,512 €	75,36 €

*Prix donné à titre indicatif

N° de stock RS:: 218-4398
Référence fabricant:: IHW30N160R5XKSA1
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	IGBT
	Maximum Continuous Collector Current Ic	30A
	Maximum Collector Emitter Voltage Vceo	1.6kV
	Number of Transistors	1
	Maximum Power Dissipation Pd	263W
	Package Type	TO-247
	Mount Type	Through Hole
	Channel Type	N
	Pin Count	3
	Minimum Operating Temperature	-40°C
	Maximum Gate Emitter Voltage VGEO	±20 ±25 V
	Maximum Collector Emitter Saturation Voltage VceSAT	1.85V
	Maximum Operating Temperature	175°C
	Series	IHW30N160R5
	Width	16.3mm
	Standards/Approvals	JEDEC47/20/22
	Length	21.5mm
	Height	5.3mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Product Type IGBT
	Maximum Continuous Collector Current Ic 30A
	Maximum Collector Emitter Voltage Vceo 1.6kV
	Number of Transistors 1
	Maximum Power Dissipation Pd 263W
	Package Type TO-247
	Mount Type Through Hole
	Channel Type N
	Pin Count 3
	Minimum Operating Temperature -40°C
	Maximum Gate Emitter Voltage VGEO ±20 ±25 V
	Maximum Collector Emitter Saturation Voltage VceSAT 1.85V
	Maximum Operating Temperature 175°C
	Series IHW30N160R5
	Width 16.3mm
	Standards/Approvals JEDEC47/20/22
	Length 21.5mm
	Height 5.3mm
	Automotive Standard No

IHW30N160R5XKSA1 Datasheet

Infineon IHW30N160R5 Series IGBT, 1600V Collector-Emitter Voltage, 30A Collector Current - IHW30N160R5XKSA1

This IGBT is a high-voltage, through‑hole transistor designed for power switching in demanding industrial environments. It operates as an N‑channel device in a TO‑247 package and is intended for applications requiring substantial current handling and elevated temperature tolerance.

Features and Benefits:

• Handles continuous collector current of 30 A for sustained loads
• Withstands collector-emitter voltage of 1600 V for high‑voltage systems
• Power dissipation rating of 263 W supports heavy switching duty
• Low collector-emitter saturation voltage of 1.85 V reduces conduction losses
• Gate-emitter voltage tolerance of ±20-25 V permits robust gate‑drive margins
• Qualified to JEDEC 47/20/22 for standardised thermal and mechanical resilience

Applications

• Suitable for industrial high‑voltage inverter stages
• Used for medium‑power traction and motor‑drive modules
• Ideal for high‑voltage DC-DC conversion circuits
• Can be used for power supplies in industrial automation
• Used with thermal‑management systems operating at elevated temperatures

What operating temperature range can it tolerate?

It functions across −40 °C to 175 °C, enabling use in wide thermal environments.

How many transistor elements are contained within the device?

The package contains a single transistor element for discrete switching.

What mounting method and package type does it use?

It is supplied for through‑hole mounting in a TO‑247 package.

Are there any approvals for mechanical and thermal testing?

It meets JEDEC 47/20/22 standards covering thermal cycling and related tests.