Infineon IHW30N160R5XKSA1, Type N-Channel IGBT, 30 A 1600 V, 3-Pin TO-247, Through Hole

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20,10 €

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24,30 €

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Unité
Prix par unité
le paquet*
5 - 54,02 €20,10 €
10 - 203,62 €18,10 €
25 - 453,376 €16,88 €
50 - 1203,136 €15,68 €
125 +2,936 €14,68 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
218-4399
Numéro d'article Distrelec:
304-31-963
Référence fabricant:
IHW30N160R5XKSA1
Fabricant:
Infineon
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Marque

Infineon

Maximum Continuous Collector Current Ic

30A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

1600V

Maximum Power Dissipation Pd

263W

Number of Transistors

1

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±20 ±25 V

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.85V

Maximum Operating Temperature

175°C

Length

21.5mm

Series

IHW30N160R5

Standards/Approvals

JEDEC47/20/22

Height

5.3mm

Automotive Standard

No

Infineon IGBT, 30A Maximum Continuous Collector Current, 1600V Maximum Collector Emitter Voltage - IHW30N160R5XKSA1


This IGBT is a robust semiconductor device designed for high voltage applications, featuring a maximum collector current of 30A and operating within a temperature range of -40°C to +175°C. The TO-247 package ensures convenient installation, while its dimensions of 16.3 x 21.5 x 5.3 mm provide a compact solution for various electronic needs.

Features & Benefits


• Reverse-conducting capability for enhanced performance

• Monolithic body diode reduces forward voltage loss

• Tight parameter distribution enhances reliability

• High ruggedness improves durability in demanding conditions

• Low EMI emissions ensure minimal interference in circuits

Applications


• Used for induction cooking

• Suitable for microwave oven circuitry

• Ideal for various high voltage switching

• Compatible with specialised semiconductor power modules

What are the key thermal characteristics of this device?


The thermal resistance from junction to ambient is 40 K/W, and the junction to case thermal resistance is 0.57 K/W, ensuring efficient heat management under load conditions.

How does this IGBT module handle high voltage applications?


It boasts a collector-emitter voltage rating of up to 1600V, making it suitable for high voltage environments while maintaining safe operation across specified limits.

What implications does the maximum power dissipation have for design?


With a maximum power dissipation of 263W, it allows for efficient energy management, ensuring that the device can operate effectively without thermal overload in typical applications.

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